Characterization of n-type layer by S + ion implantation in 4H-SiC

Y. Tanaka*, Naoto Kobayashi, H. Okumura, S. Yoshida, M. Hasegawa, M. Ogura, H. Tanoue

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)


We investigated the optical, electrical and structural properties of the layer which was implanted with sulfur ion(S +) in 4H-SiC. By using the high temperature ion implantation technique more less residual defects were observed compared with the room temperature ion implantation by Rutherford backscattering spectrometry and channeling(RBS-channeling). After annealing at 1700°C there was no significant difference between the implanted sample and virgin sample in crystallinity within the detection limit of RBS-channeling. From the result of low temperature photoluminescence(LTPL) we could see the photoluminescences, so-called D 1 and D 2 center, originating in the defects formed by ion implantation and post-annealing(∼1700°C) processes and confirmed that their intensities decreased with the increasing of the total dose of S +. The result of Hall effect measurement suggested that the conduction type of S +-implanted layer is n-type and their activation energies were 275meV and 410meV by the fitting of neutrality equation assuming the two activation energies for the hexagonal and cubic lattice sites in 4H-SiC.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsR.J. Shul, F. Ren, W. Pletschen, M. Murakami
Publication statusPublished - 2000
Externally publishedYes
EventWide-Bandgap Electronic Devices - San Francisco, CA, United States
Duration: 2000 Apr 242000 Apr 27


OtherWide-Bandgap Electronic Devices
Country/TerritoryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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