Characterization of nanoporous Si thin films obtained by Al-Si phase separation

Kazuhiko Fukutani; Youhei Ishida; Toshiaki Aiba; Hirokatsu Miyata; Tohru Den

doi:10.1063/1.2149292

Characterization of nanoporous Si thin films obtained by Al-Si phase separation

Kazuhiko Fukutani^*, Youhei Ishida, Toshiaki Aiba, Hirokatsu Miyata, Tohru Den

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Nanoporous silicon films of ultrahigh pore densities and large surface areas have been fabricated by sputtering an Al-Si target and subsequent removal of the deposited film's Al regions by etching in a sulfuric acid solution. The resulting nanoporous films are mainly composed of amorphous silicon and have cylindrical pores with an average pore density exceeding 1016 pores m2. These nanoporous films can be crystallized by thermal annealing in a H2 atmosphere to improve their electrical properties. The electrical properties of the crystallized nanoporous films, which behave as p -type semiconductors, are very similar to those of electrochemically etched porous Si.

Original language	English
Article number	253112
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	25
DOIs	https://doi.org/10.1063/1.2149292
Publication status	Published - 2005
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2149292

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abstract = "Nanoporous silicon films of ultrahigh pore densities and large surface areas have been fabricated by sputtering an Al-Si target and subsequent removal of the deposited film's Al regions by etching in a sulfuric acid solution. The resulting nanoporous films are mainly composed of amorphous silicon and have cylindrical pores with an average pore density exceeding 1016 pores m2. These nanoporous films can be crystallized by thermal annealing in a H2 atmosphere to improve their electrical properties. The electrical properties of the crystallized nanoporous films, which behave as p -type semiconductors, are very similar to those of electrochemically etched porous Si.",

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AU - Fukutani, Kazuhiko

AU - Ishida, Youhei

AU - Aiba, Toshiaki

AU - Miyata, Hirokatsu

AU - Den, Tohru

PY - 2005

Y1 - 2005

N2 - Nanoporous silicon films of ultrahigh pore densities and large surface areas have been fabricated by sputtering an Al-Si target and subsequent removal of the deposited film's Al regions by etching in a sulfuric acid solution. The resulting nanoporous films are mainly composed of amorphous silicon and have cylindrical pores with an average pore density exceeding 1016 pores m2. These nanoporous films can be crystallized by thermal annealing in a H2 atmosphere to improve their electrical properties. The electrical properties of the crystallized nanoporous films, which behave as p -type semiconductors, are very similar to those of electrochemically etched porous Si.

AB - Nanoporous silicon films of ultrahigh pore densities and large surface areas have been fabricated by sputtering an Al-Si target and subsequent removal of the deposited film's Al regions by etching in a sulfuric acid solution. The resulting nanoporous films are mainly composed of amorphous silicon and have cylindrical pores with an average pore density exceeding 1016 pores m2. These nanoporous films can be crystallized by thermal annealing in a H2 atmosphere to improve their electrical properties. The electrical properties of the crystallized nanoporous films, which behave as p -type semiconductors, are very similar to those of electrochemically etched porous Si.

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Characterization of nanoporous Si thin films obtained by Al-Si phase separation

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