Characterization of nanoporous Si thin films obtained by Al-Si phase separation

Kazuhiko Fukutani*, Youhei Ishida, Toshiaki Aiba, Hirokatsu Miyata, Tohru Den

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


Nanoporous silicon films of ultrahigh pore densities and large surface areas have been fabricated by sputtering an Al-Si target and subsequent removal of the deposited film's Al regions by etching in a sulfuric acid solution. The resulting nanoporous films are mainly composed of amorphous silicon and have cylindrical pores with an average pore density exceeding 1016 pores m2. These nanoporous films can be crystallized by thermal annealing in a H2 atmosphere to improve their electrical properties. The electrical properties of the crystallized nanoporous films, which behave as p -type semiconductors, are very similar to those of electrochemically etched porous Si.

Original languageEnglish
Article number253112
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number25
Publication statusPublished - 2005
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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