Characterization of nanotextured AlN thin films by x-ray absorption near-edge structures

T. Suga; S. Kameyama; S. Yoshioka; T. Yamamoto; I. Tanaka; T. Mizoguchi

doi:10.1063/1.1904714

Characterization of nanotextured AlN thin films by x-ray absorption near-edge structures

T. Suga, S. Kameyama, S. Yoshioka, T. Yamamoto, I. Tanaka^*, T. Mizoguchi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

AlN thin films have been grown on c -cut sapphire substrates by pulsed-laser deposition. The film epitaxially grown at 1073 K under vacuum of 5× 10-4 Pa was used to examine the crystallographic orientation dependence of Al K -edge x-ray absorption near-edge structures (XANES), which satisfactorily agrees with theoretical spectra obtained by first-principles calculations. The film grown at 1073 K with N2 backfill of 7× 10-2 Pa shows nanotextured structure with its c plane parallel to the substrate. Although the nanotexture is not evident by x-ray diffraction, XANES can unambiguously indicate the texturing. Cross-sectional high-resolution electron microscopy provides the evidence of the nanostructure.

Original language	English
Article number	163113
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	16
DOIs	https://doi.org/10.1063/1.1904714
Publication status	Published - 2005 Apr 18
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Characterization of nanotextured AlN thin films by x-ray absorption near-edge structures",

abstract = "AlN thin films have been grown on c -cut sapphire substrates by pulsed-laser deposition. The film epitaxially grown at 1073 K under vacuum of 5× 10-4 Pa was used to examine the crystallographic orientation dependence of Al K -edge x-ray absorption near-edge structures (XANES), which satisfactorily agrees with theoretical spectra obtained by first-principles calculations. The film grown at 1073 K with N2 backfill of 7× 10-2 Pa shows nanotextured structure with its c plane parallel to the substrate. Although the nanotexture is not evident by x-ray diffraction, XANES can unambiguously indicate the texturing. Cross-sectional high-resolution electron microscopy provides the evidence of the nanostructure.",

author = "T. Suga and S. Kameyama and S. Yoshioka and T. Yamamoto and I. Tanaka and T. Mizoguchi",

note = "Funding Information: The authors would like to thank Dr. R. C. C. Perera and Dr. P. Nachimuthu of Lawrence Berkeley Laboratory for their assistance with XANES measurements at ALS, and Professor Wai Yim Ching for allowing the authors to use the OLCAO code. This work was supported by three projects from the Ministry of Education, Culture, Sports, Science and Technology of Japan. They are Grant-in-Aid for Scientific Research on Priority Areas (No. 751), the Computational Materials Science Project in Kyoto University, and the 21st century COE program. One of the authors, T.M., is a JSPS research fellow.",

year = "2005",

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doi = "10.1063/1.1904714",

language = "English",

volume = "86",

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AU - Suga, T.

AU - Kameyama, S.

AU - Yoshioka, S.

AU - Yamamoto, T.

AU - Tanaka, I.

AU - Mizoguchi, T.

N1 - Funding Information: The authors would like to thank Dr. R. C. C. Perera and Dr. P. Nachimuthu of Lawrence Berkeley Laboratory for their assistance with XANES measurements at ALS, and Professor Wai Yim Ching for allowing the authors to use the OLCAO code. This work was supported by three projects from the Ministry of Education, Culture, Sports, Science and Technology of Japan. They are Grant-in-Aid for Scientific Research on Priority Areas (No. 751), the Computational Materials Science Project in Kyoto University, and the 21st century COE program. One of the authors, T.M., is a JSPS research fellow.

PY - 2005/4/18

Y1 - 2005/4/18

N2 - AlN thin films have been grown on c -cut sapphire substrates by pulsed-laser deposition. The film epitaxially grown at 1073 K under vacuum of 5× 10-4 Pa was used to examine the crystallographic orientation dependence of Al K -edge x-ray absorption near-edge structures (XANES), which satisfactorily agrees with theoretical spectra obtained by first-principles calculations. The film grown at 1073 K with N2 backfill of 7× 10-2 Pa shows nanotextured structure with its c plane parallel to the substrate. Although the nanotexture is not evident by x-ray diffraction, XANES can unambiguously indicate the texturing. Cross-sectional high-resolution electron microscopy provides the evidence of the nanostructure.

AB - AlN thin films have been grown on c -cut sapphire substrates by pulsed-laser deposition. The film epitaxially grown at 1073 K under vacuum of 5× 10-4 Pa was used to examine the crystallographic orientation dependence of Al K -edge x-ray absorption near-edge structures (XANES), which satisfactorily agrees with theoretical spectra obtained by first-principles calculations. The film grown at 1073 K with N2 backfill of 7× 10-2 Pa shows nanotextured structure with its c plane parallel to the substrate. Although the nanotexture is not evident by x-ray diffraction, XANES can unambiguously indicate the texturing. Cross-sectional high-resolution electron microscopy provides the evidence of the nanostructure.

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Characterization of nanotextured AlN thin films by x-ray absorption near-edge structures

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