Abstract
AlN thin films have been grown on c -cut sapphire substrates by pulsed-laser deposition. The film epitaxially grown at 1073 K under vacuum of 5× 10-4 Pa was used to examine the crystallographic orientation dependence of Al K -edge x-ray absorption near-edge structures (XANES), which satisfactorily agrees with theoretical spectra obtained by first-principles calculations. The film grown at 1073 K with N2 backfill of 7× 10-2 Pa shows nanotextured structure with its c plane parallel to the substrate. Although the nanotexture is not evident by x-ray diffraction, XANES can unambiguously indicate the texturing. Cross-sectional high-resolution electron microscopy provides the evidence of the nanostructure.
Original language | English |
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Article number | 163113 |
Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 86 |
Issue number | 16 |
DOIs | |
Publication status | Published - 2005 Apr 18 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)