Characterization of sol-gel derived Bi4-xlaxTi 3O12 films

Naoki Sugita; Minoru Osada; Eisuke Tokumitsu

doi:10.1143/JJAP.41.6810

Characterization of sol-gel derived Bi_4-xla_xTi ₃O₁₂ films

Naoki Sugita^*, Minoru Osada, Eisuke Tokumitsu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Ferroelectric Bi₄Ti₃O₁₂ (BIT) and Bi _4-xLa_xTi₃O₁₂(BLT) (x = 0.25, 0.5, 0.75) films were prepared on Pt/Ti/SiO₂ substrates by the sol-gel technique. The P-E hysteresis loop, whose squareness was enhanced more than that of a BIT film's, was obtained for a BLT film with a La composition of 0.75 annealed at 650°C or higher temperatures. A remanent polarization of 13 μC/cm² and a coercive electric field of 80 kV/cm were obtained. Raman scattering measurements reveal that the crystallization temperature at which a perovskite structure forms decreased with increasing La content. In addition, it is shown that the crystallization process depends on the La content.

Original language	English
Pages (from-to)	6810-6813
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	41
Issue number	11 B
DOIs	https://doi.org/10.1143/JJAP.41.6810
Publication status	Published - 2002 Nov
Externally published	Yes

Keywords

Bismuth titanate
Crystallization
Ferroelectrics
Raman spectra
Thin films

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1143/JJAP.41.6810

Cite this

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title = "Characterization of sol-gel derived Bi4-xlaxTi 3O12 films",

abstract = "Ferroelectric Bi4Ti3O12 (BIT) and Bi 4-xLaxTi3O12(BLT) (x = 0.25, 0.5, 0.75) films were prepared on Pt/Ti/SiO2 substrates by the sol-gel technique. The P-E hysteresis loop, whose squareness was enhanced more than that of a BIT film's, was obtained for a BLT film with a La composition of 0.75 annealed at 650°C or higher temperatures. A remanent polarization of 13 μC/cm2 and a coercive electric field of 80 kV/cm were obtained. Raman scattering measurements reveal that the crystallization temperature at which a perovskite structure forms decreased with increasing La content. In addition, it is shown that the crystallization process depends on the La content.",

keywords = "Bismuth titanate, Crystallization, Ferroelectrics, Raman spectra, Thin films",

author = "Naoki Sugita and Minoru Osada and Eisuke Tokumitsu",

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language = "English",

volume = "41",

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T1 - Characterization of sol-gel derived Bi4-xlaxTi 3O12 films

AU - Sugita, Naoki

AU - Osada, Minoru

AU - Tokumitsu, Eisuke

PY - 2002/11

Y1 - 2002/11

N2 - Ferroelectric Bi4Ti3O12 (BIT) and Bi 4-xLaxTi3O12(BLT) (x = 0.25, 0.5, 0.75) films were prepared on Pt/Ti/SiO2 substrates by the sol-gel technique. The P-E hysteresis loop, whose squareness was enhanced more than that of a BIT film's, was obtained for a BLT film with a La composition of 0.75 annealed at 650°C or higher temperatures. A remanent polarization of 13 μC/cm2 and a coercive electric field of 80 kV/cm were obtained. Raman scattering measurements reveal that the crystallization temperature at which a perovskite structure forms decreased with increasing La content. In addition, it is shown that the crystallization process depends on the La content.

AB - Ferroelectric Bi4Ti3O12 (BIT) and Bi 4-xLaxTi3O12(BLT) (x = 0.25, 0.5, 0.75) films were prepared on Pt/Ti/SiO2 substrates by the sol-gel technique. The P-E hysteresis loop, whose squareness was enhanced more than that of a BIT film's, was obtained for a BLT film with a La composition of 0.75 annealed at 650°C or higher temperatures. A remanent polarization of 13 μC/cm2 and a coercive electric field of 80 kV/cm were obtained. Raman scattering measurements reveal that the crystallization temperature at which a perovskite structure forms decreased with increasing La content. In addition, it is shown that the crystallization process depends on the La content.

KW - Bismuth titanate

KW - Crystallization

KW - Ferroelectrics

KW - Raman spectra

KW - Thin films

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