Characterization of sol-gel derived Bi4-xlaxTi 3O12 films

Naoki Sugita*, Minoru Osada, Eisuke Tokumitsu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


Ferroelectric Bi4Ti3O12 (BIT) and Bi 4-xLaxTi3O12(BLT) (x = 0.25, 0.5, 0.75) films were prepared on Pt/Ti/SiO2 substrates by the sol-gel technique. The P-E hysteresis loop, whose squareness was enhanced more than that of a BIT film's, was obtained for a BLT film with a La composition of 0.75 annealed at 650°C or higher temperatures. A remanent polarization of 13 μC/cm2 and a coercive electric field of 80 kV/cm were obtained. Raman scattering measurements reveal that the crystallization temperature at which a perovskite structure forms decreased with increasing La content. In addition, it is shown that the crystallization process depends on the La content.

Original languageEnglish
Pages (from-to)6810-6813
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number11 B
Publication statusPublished - 2002 Nov
Externally publishedYes


  • Bismuth titanate
  • Crystallization
  • Ferroelectrics
  • Raman spectra
  • Thin films

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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