Chemical design of polysilsesquioxane as a gate insulator for organic thin-film transistors

T. Hamada*, S. Yamazaki, T. Nagase, K. Tomatsu, Y. Ueda, M. Watanabe, S. Watase, T. Tamai, T. Kobayashi, S. Murakami, H. Naito, K. Matsukawa

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

2 Citations (Scopus)


We have developed polymethylsilsesquioxane (PMSQ)-type gate insulating thin films with good high resistivity and surface morphology. In addition, novel functional polysilsesquioxane gate insulator materials have been developed, which have a high-dielectric constant, photolithographic property, and hydrophobic surface by changing the chemical structure. Top-contact organic thin-film transistor (OTFTs) fabricated on polysilsesquioxane insulator using poly(3-hexyl)thiophene as an organic semiconductor exhibits good transistor property.

Original languageEnglish
Number of pages4
Publication statusPublished - 2008
Externally publishedYes
Event15th International Display Workshops, IDW '08 - Niigata, Japan
Duration: 2008 Dec 32008 Dec 5


Conference15th International Display Workshops, IDW '08

ASJC Scopus subject areas

  • Hardware and Architecture
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials


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