Chemical design of polysilsesquioxane as a gate insulator for organic thin-film transistors

T. Hamada; S. Yamazaki; T. Nagase; K. Tomatsu; Y. Ueda; M. Watanabe; S. Watase; T. Tamai; T. Kobayashi; S. Murakami; H. Naito; K. Matsukawa

Chemical design of polysilsesquioxane as a gate insulator for organic thin-film transistors

T. Hamada^*, S. Yamazaki, T. Nagase, K. Tomatsu, Y. Ueda, M. Watanabe, S. Watase, T. Tamai, T. Kobayashi, S. Murakami, H. Naito, K. Matsukawa

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

2 Citations (Scopus)

Abstract

We have developed polymethylsilsesquioxane (PMSQ)-type gate insulating thin films with good high resistivity and surface morphology. In addition, novel functional polysilsesquioxane gate insulator materials have been developed, which have a high-dielectric constant, photolithographic property, and hydrophobic surface by changing the chemical structure. Top-contact organic thin-film transistor (OTFTs) fabricated on polysilsesquioxane insulator using poly(3-hexyl)thiophene as an organic semiconductor exhibits good transistor property.

Original language	English
Pages	1665-1668
Number of pages	4
Publication status	Published - 2008
Externally published	Yes
Event	15th International Display Workshops, IDW '08 - Niigata, Japan Duration: 2008 Dec 3 → 2008 Dec 5

Conference

Conference	15th International Display Workshops, IDW '08
Country/Territory	Japan
City	Niigata
Period	08/12/3 → 08/12/5

ASJC Scopus subject areas

Hardware and Architecture
Human-Computer Interaction
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Cite this

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title = "Chemical design of polysilsesquioxane as a gate insulator for organic thin-film transistors",

abstract = "We have developed polymethylsilsesquioxane (PMSQ)-type gate insulating thin films with good high resistivity and surface morphology. In addition, novel functional polysilsesquioxane gate insulator materials have been developed, which have a high-dielectric constant, photolithographic property, and hydrophobic surface by changing the chemical structure. Top-contact organic thin-film transistor (OTFTs) fabricated on polysilsesquioxane insulator using poly(3-hexyl)thiophene as an organic semiconductor exhibits good transistor property.",

author = "T. Hamada and S. Yamazaki and T. Nagase and K. Tomatsu and Y. Ueda and M. Watanabe and S. Watase and T. Tamai and T. Kobayashi and S. Murakami and H. Naito and K. Matsukawa",

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language = "English",

pages = "1665--1668",

note = "15th International Display Workshops, IDW '08 ; Conference date: 03-12-2008 Through 05-12-2008",

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TY - CONF

T1 - Chemical design of polysilsesquioxane as a gate insulator for organic thin-film transistors

AU - Hamada, T.

AU - Yamazaki, S.

AU - Nagase, T.

AU - Tomatsu, K.

AU - Ueda, Y.

AU - Watanabe, M.

AU - Watase, S.

AU - Tamai, T.

AU - Kobayashi, T.

AU - Murakami, S.

AU - Naito, H.

AU - Matsukawa, K.

PY - 2008

Y1 - 2008

N2 - We have developed polymethylsilsesquioxane (PMSQ)-type gate insulating thin films with good high resistivity and surface morphology. In addition, novel functional polysilsesquioxane gate insulator materials have been developed, which have a high-dielectric constant, photolithographic property, and hydrophobic surface by changing the chemical structure. Top-contact organic thin-film transistor (OTFTs) fabricated on polysilsesquioxane insulator using poly(3-hexyl)thiophene as an organic semiconductor exhibits good transistor property.

AB - We have developed polymethylsilsesquioxane (PMSQ)-type gate insulating thin films with good high resistivity and surface morphology. In addition, novel functional polysilsesquioxane gate insulator materials have been developed, which have a high-dielectric constant, photolithographic property, and hydrophobic surface by changing the chemical structure. Top-contact organic thin-film transistor (OTFTs) fabricated on polysilsesquioxane insulator using poly(3-hexyl)thiophene as an organic semiconductor exhibits good transistor property.

UR - http://www.scopus.com/inward/record.url?scp=77954206281&partnerID=8YFLogxK

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M3 - Paper

AN - SCOPUS:77954206281

SP - 1665

EP - 1668

T2 - 15th International Display Workshops, IDW '08

Y2 - 3 December 2008 through 5 December 2008

ER -

Chemical design of polysilsesquioxane as a gate insulator for organic thin-film transistors

Abstract

Conference

ASJC Scopus subject areas

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