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Chemical design of polysilsesquioxane as a gate insulator for organic thin-film transistors
T. Hamada*, S. Yamazaki, T. Nagase, K. Tomatsu, Y. Ueda, M. Watanabe, S. Watase, T. Tamai, T. Kobayashi, S. Murakami, H. Naito, K. Matsukawa
*Corresponding author for this work
Research output: Contribution to conference › Paper › peer-review
1
Citation
(Scopus)