Chemical short-range order in ion-beam-induced amorphous SiC: Irradiation temperature dependence

Manabu Ishimaru*, In Tae Bae, Akihiko Hirata, Yoshihiko Hirotsu, James A. Valdez, Kurt E. Sickafus

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


Chemical short-range order of ion-beam-induced amorphous SiC (a-SiC) has been examined by transmission electron microscopy in combination with imaging plate techniques. Single crystals of 6H-SiC were irradiated with 300 keV xenon ions to a fluence of 1015 cm-2 at cryogenic and elevated temperatures. Atomic pair-distribution functions showed that not only heteronuclear (Si-C) bonds but also homonuclear (Si-Si and C-C) bonds exist within the first coordination shell of a-SiC networks. It was found that chemical short-range order of a-SiC depends on the ion irradiation conditions: the amorphous networks became more chemically disorder with decreasing the irradiation temperature.

Original languageEnglish
Pages (from-to)473-475
Number of pages3
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Issue number1-2
Publication statusPublished - 2006 Jan
Externally publishedYes


  • Amorphous structure
  • Atomic pair-distribution function
  • Silicon carbide
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation


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