Chemical Vapor Deposition of Monolayer Mo1-xWxS2 Crystals with Tunable Band Gaps

Ziqian Wang; Pan Liu; Yoshikazu Ito; Shoucong Ning; Yongwen Tan; Takeshi Fujita; Akihiko Hirata; Mingwei Chen

doi:10.1038/srep21536

Chemical Vapor Deposition of Monolayer Mo_1-xW_xS₂ Crystals with Tunable Band Gaps

Ziqian Wang, Pan Liu, Yoshikazu Ito, Shoucong Ning, Yongwen Tan, Takeshi Fujita, Akihiko Hirata, Mingwei Chen^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

100 Citations (Scopus)

Abstract

Band gap engineering of monolayer transition metal dichalcogenides, such as MoS₂ and WS₂, is essential for the applications of the two-dimensional (2D) crystals in electronic and optoelectronic devices. Although it is known that chemical mixture can evidently change the band gaps of alloyed Mo_1-xW_xS₂ crystals, the successful growth of Mo_1-xW_xS₂ monolayers with tunable Mo/W ratios has not been realized by conventional chemical vapor deposition. Herein, we developed a low-pressure chemical vapor deposition (LP-CVD) method to grow monolayer Mo_1-xW_xS₂ (x = 0-1) 2D crystals with a wide range of Mo/W ratios. Raman spectroscopy and high-resolution transmission electron microscopy demonstrate the homogeneous mixture of Mo and W in the 2D alloys. Photoluminescence measurements show that the optical band gaps of the monolayer Mo_1-xW_xS₂ crystals strongly depend on the Mo/W ratios and continuously tunable band gap can be achieved by controlling the W or Mo portion by the LP-CVD.

Original language	English
Article number	21536
Journal	Scientific reports
Volume	6
DOIs	https://doi.org/10.1038/srep21536
Publication status	Published - 2016 Feb 22
Externally published	Yes

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title = "Chemical Vapor Deposition of Monolayer Mo1-xWxS2 Crystals with Tunable Band Gaps",

abstract = "Band gap engineering of monolayer transition metal dichalcogenides, such as MoS2 and WS2, is essential for the applications of the two-dimensional (2D) crystals in electronic and optoelectronic devices. Although it is known that chemical mixture can evidently change the band gaps of alloyed Mo1-xWxS2 crystals, the successful growth of Mo1-xWxS2 monolayers with tunable Mo/W ratios has not been realized by conventional chemical vapor deposition. Herein, we developed a low-pressure chemical vapor deposition (LP-CVD) method to grow monolayer Mo1-xWxS2 (x = 0-1) 2D crystals with a wide range of Mo/W ratios. Raman spectroscopy and high-resolution transmission electron microscopy demonstrate the homogeneous mixture of Mo and W in the 2D alloys. Photoluminescence measurements show that the optical band gaps of the monolayer Mo1-xWxS2 crystals strongly depend on the Mo/W ratios and continuously tunable band gap can be achieved by controlling the W or Mo portion by the LP-CVD.",

author = "Ziqian Wang and Pan Liu and Yoshikazu Ito and Shoucong Ning and Yongwen Tan and Takeshi Fujita and Akihiko Hirata and Mingwei Chen",

note = "Funding Information: We thank the Institute for Material Research at Tohoku University for the assistance with the XPS measurements. We thank Prof. Takashi Goto and Prof. Hiroshi Masumoto for their valuable suggestion and discussion. This work is sponsored by JST-CREST “Phase Interface Science for Highly Efficient Energy Utilization”, JST, Japan; World Premier International (WPI) Research Center Initiative for Atoms, Molecules and Materials, MEXT, Japan, and partially supported by Japan society for the promotion of science (JSPS) Grant-in-Aid for Scientific Research on Innovative Areas “Science of Atomic Layers” (Grant No. 26107504). S. Ning is grateful for the financial support by the General Research Fund (Project number, 622813) from the Hong Kong Research Grants Council.",

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AU - Wang, Ziqian

AU - Liu, Pan

AU - Ito, Yoshikazu

AU - Ning, Shoucong

AU - Tan, Yongwen

AU - Fujita, Takeshi

AU - Hirata, Akihiko

AU - Chen, Mingwei

N1 - Funding Information: We thank the Institute for Material Research at Tohoku University for the assistance with the XPS measurements. We thank Prof. Takashi Goto and Prof. Hiroshi Masumoto for their valuable suggestion and discussion. This work is sponsored by JST-CREST “Phase Interface Science for Highly Efficient Energy Utilization”, JST, Japan; World Premier International (WPI) Research Center Initiative for Atoms, Molecules and Materials, MEXT, Japan, and partially supported by Japan society for the promotion of science (JSPS) Grant-in-Aid for Scientific Research on Innovative Areas “Science of Atomic Layers” (Grant No. 26107504). S. Ning is grateful for the financial support by the General Research Fund (Project number, 622813) from the Hong Kong Research Grants Council.

PY - 2016/2/22

Y1 - 2016/2/22

N2 - Band gap engineering of monolayer transition metal dichalcogenides, such as MoS2 and WS2, is essential for the applications of the two-dimensional (2D) crystals in electronic and optoelectronic devices. Although it is known that chemical mixture can evidently change the band gaps of alloyed Mo1-xWxS2 crystals, the successful growth of Mo1-xWxS2 monolayers with tunable Mo/W ratios has not been realized by conventional chemical vapor deposition. Herein, we developed a low-pressure chemical vapor deposition (LP-CVD) method to grow monolayer Mo1-xWxS2 (x = 0-1) 2D crystals with a wide range of Mo/W ratios. Raman spectroscopy and high-resolution transmission electron microscopy demonstrate the homogeneous mixture of Mo and W in the 2D alloys. Photoluminescence measurements show that the optical band gaps of the monolayer Mo1-xWxS2 crystals strongly depend on the Mo/W ratios and continuously tunable band gap can be achieved by controlling the W or Mo portion by the LP-CVD.

AB - Band gap engineering of monolayer transition metal dichalcogenides, such as MoS2 and WS2, is essential for the applications of the two-dimensional (2D) crystals in electronic and optoelectronic devices. Although it is known that chemical mixture can evidently change the band gaps of alloyed Mo1-xWxS2 crystals, the successful growth of Mo1-xWxS2 monolayers with tunable Mo/W ratios has not been realized by conventional chemical vapor deposition. Herein, we developed a low-pressure chemical vapor deposition (LP-CVD) method to grow monolayer Mo1-xWxS2 (x = 0-1) 2D crystals with a wide range of Mo/W ratios. Raman spectroscopy and high-resolution transmission electron microscopy demonstrate the homogeneous mixture of Mo and W in the 2D alloys. Photoluminescence measurements show that the optical band gaps of the monolayer Mo1-xWxS2 crystals strongly depend on the Mo/W ratios and continuously tunable band gap can be achieved by controlling the W or Mo portion by the LP-CVD.

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Chemical Vapor Deposition of Monolayer Mo_1-xW_xS₂ Crystals with Tunable Band Gaps

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