Classification of the pore structure of n-type silicon and its microstructure

Tetsuya Osaka*, Kako Ogasawara, Shohei Nakahara

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

31 Citations (Scopus)


Porous silicon samples were grown under various anodization conditions on {100} oriented n-silicon substrates. Scanning and transmission electron microscope observations have shown that the microstructure of porous silicon primarily falls into three categories, which can be classified as single layer, double layer, and large macropore types. These three types differ not only in their microstructural details, but also in luminescence properties. In all three types of samples, the inner surface of pores created by anodization is coated with a low density amorphous material, which contained silicon and oxygen. In addition, all the pore surfaces were roughened by anodization, leaving nanoscale crystalline silicon asperities.

Original languageEnglish
Pages (from-to)3226-3237
Number of pages12
JournalJournal of the Electrochemical Society
Issue number9
Publication statusPublished - 1997 Sept

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Renewable Energy, Sustainability and the Environment


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