Closed recycle CVD process for mass production of SOG-Si from MG-Si

Suguru Noda; Kazunori Hagiwara; Osamu Ichikawa; Katsuaki Tanabe; Takashi Yahiro; Hiroshi Ohkawa; Toshio Osawa; Hiroshi Komiyama

Closed recycle CVD process for mass production of SOG-Si from MG-Si

Suguru Noda^*, Kazunori Hagiwara, Osamu Ichikawa, Katsuaki Tanabe, Takashi Yahiro, Hiroshi Ohkawa, Toshio Osawa, Hiroshi Komiyama

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

"CVD Process with Closed Gas Recycling" is proposed for mass production of SOG-Si from MG-Si. By combining chlorosilane synthesis in the reaction of MG-Si and HCl and Si-CVD from chlorosilanes, a closed system with ideal Si conversion ratio of 100% can be realized with little emission of chloride pollutants. Based on thermodynamic investigation, operating temperatures were set below 900 K for Si etching and above 1200 K for Si-CVD. Si etching showed time dependent natures due to the activation of Si surface, and the rate of activated surfaces was in the order of 1 μm/min (623- 723 K, 0.9×10⁵ Pa, 3.3- 10 mol% HCl/H₂). Si growth rate by CVD was also in the same order (1323- 1473 K, 0.1- 1×10⁵ Pa, 0.1- 9 mol% SiHCl₃/H₂ or SiCl₄/H₂), which was quantitatively explained by kinetic simulations. This process can be combined with layer transfer processes to form crystalline Si thin films.

Original language	English
Pages (from-to)	308-311
Number of pages	4
Journal	Conference Record of the IEEE Photovoltaic Specialists Conference
Publication status	Published - 2002 Dec 1
Externally published	Yes
Event	29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States Duration: 2002 May 19 → 2002 May 24

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Cite this

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title = "Closed recycle CVD process for mass production of SOG-Si from MG-Si",

abstract = "{"}CVD Process with Closed Gas Recycling{"} is proposed for mass production of SOG-Si from MG-Si. By combining chlorosilane synthesis in the reaction of MG-Si and HCl and Si-CVD from chlorosilanes, a closed system with ideal Si conversion ratio of 100% can be realized with little emission of chloride pollutants. Based on thermodynamic investigation, operating temperatures were set below 900 K for Si etching and above 1200 K for Si-CVD. Si etching showed time dependent natures due to the activation of Si surface, and the rate of activated surfaces was in the order of 1 μm/min (623- 723 K, 0.9×105 Pa, 3.3- 10 mol% HCl/H2). Si growth rate by CVD was also in the same order (1323- 1473 K, 0.1- 1×105 Pa, 0.1- 9 mol% SiHCl3/H2 or SiCl4/H2), which was quantitatively explained by kinetic simulations. This process can be combined with layer transfer processes to form crystalline Si thin films.",

author = "Suguru Noda and Kazunori Hagiwara and Osamu Ichikawa and Katsuaki Tanabe and Takashi Yahiro and Hiroshi Ohkawa and Toshio Osawa and Hiroshi Komiyama",

year = "2002",

month = dec,

day = "1",

language = "English",

pages = "308--311",

journal = "Conference Record of the IEEE Photovoltaic Specialists Conference",

issn = "0160-8371",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "29th IEEE Photovoltaic Specialists Conference ; Conference date: 19-05-2002 Through 24-05-2002",

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TY - JOUR

T1 - Closed recycle CVD process for mass production of SOG-Si from MG-Si

AU - Noda, Suguru

AU - Hagiwara, Kazunori

AU - Ichikawa, Osamu

AU - Tanabe, Katsuaki

AU - Yahiro, Takashi

AU - Ohkawa, Hiroshi

AU - Osawa, Toshio

AU - Komiyama, Hiroshi

PY - 2002/12/1

Y1 - 2002/12/1

N2 - "CVD Process with Closed Gas Recycling" is proposed for mass production of SOG-Si from MG-Si. By combining chlorosilane synthesis in the reaction of MG-Si and HCl and Si-CVD from chlorosilanes, a closed system with ideal Si conversion ratio of 100% can be realized with little emission of chloride pollutants. Based on thermodynamic investigation, operating temperatures were set below 900 K for Si etching and above 1200 K for Si-CVD. Si etching showed time dependent natures due to the activation of Si surface, and the rate of activated surfaces was in the order of 1 μm/min (623- 723 K, 0.9×105 Pa, 3.3- 10 mol% HCl/H2). Si growth rate by CVD was also in the same order (1323- 1473 K, 0.1- 1×105 Pa, 0.1- 9 mol% SiHCl3/H2 or SiCl4/H2), which was quantitatively explained by kinetic simulations. This process can be combined with layer transfer processes to form crystalline Si thin films.

AB - "CVD Process with Closed Gas Recycling" is proposed for mass production of SOG-Si from MG-Si. By combining chlorosilane synthesis in the reaction of MG-Si and HCl and Si-CVD from chlorosilanes, a closed system with ideal Si conversion ratio of 100% can be realized with little emission of chloride pollutants. Based on thermodynamic investigation, operating temperatures were set below 900 K for Si etching and above 1200 K for Si-CVD. Si etching showed time dependent natures due to the activation of Si surface, and the rate of activated surfaces was in the order of 1 μm/min (623- 723 K, 0.9×105 Pa, 3.3- 10 mol% HCl/H2). Si growth rate by CVD was also in the same order (1323- 1473 K, 0.1- 1×105 Pa, 0.1- 9 mol% SiHCl3/H2 or SiCl4/H2), which was quantitatively explained by kinetic simulations. This process can be combined with layer transfer processes to form crystalline Si thin films.

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M3 - Conference article

AN - SCOPUS:0036948377

SN - 0160-8371

SP - 308

EP - 311

JO - Conference Record of the IEEE Photovoltaic Specialists Conference

JF - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - 29th IEEE Photovoltaic Specialists Conference

Y2 - 19 May 2002 through 24 May 2002

ER -

Closed recycle CVD process for mass production of SOG-Si from MG-Si

Abstract

ASJC Scopus subject areas

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