Closed recycle CVD process for mass production of SOG-Si from MG-Si

Suguru Noda*, Kazunori Hagiwara, Osamu Ichikawa, Katsuaki Tanabe, Takashi Yahiro, Hiroshi Ohkawa, Toshio Osawa, Hiroshi Komiyama

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


"CVD Process with Closed Gas Recycling" is proposed for mass production of SOG-Si from MG-Si. By combining chlorosilane synthesis in the reaction of MG-Si and HCl and Si-CVD from chlorosilanes, a closed system with ideal Si conversion ratio of 100% can be realized with little emission of chloride pollutants. Based on thermodynamic investigation, operating temperatures were set below 900 K for Si etching and above 1200 K for Si-CVD. Si etching showed time dependent natures due to the activation of Si surface, and the rate of activated surfaces was in the order of 1 μm/min (623- 723 K, 0.9×105 Pa, 3.3- 10 mol% HCl/H2). Si growth rate by CVD was also in the same order (1323- 1473 K, 0.1- 1×105 Pa, 0.1- 9 mol% SiHCl3/H2 or SiCl4/H2), which was quantitatively explained by kinetic simulations. This process can be combined with layer transfer processes to form crystalline Si thin films.

Original languageEnglish
Pages (from-to)308-311
Number of pages4
JournalConference Record of the IEEE Photovoltaic Specialists Conference
Publication statusPublished - 2002 Dec 1
Externally publishedYes
Event29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States
Duration: 2002 May 192002 May 24

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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