@inproceedings{034c2f5b7e5d4bbabde88333fa5770f5,
title = "CMOS power amplifier with temperature compensation for 79 GHz radar system",
abstract = "We have developed a 79 GHz CMOS power amplifier (PA) with temperature compensation implemented using 40 nm CMOS technology that suppresses the variation of small-signal gain and the degradation of linearity within 0.8 dB in the temperature range from 0 to 100°C. The PA consists of an on-chip temperature sensor and four-stage common-source NMOS amplifiers. The temperature-compensated PA operating at 100°C achieved a small-signal gain of 15.7 dB, a 12 GHz bandwidth and a saturated output power (Psat) of 6.8 dBm with 96.2 mW power consumption at a supply voltage of 1.1 V.",
keywords = "CMOS, millimeter-wave, power amplifier, temperature compensation, temperature sensor",
author = "Takeshi Yoshida and Kyoya Takano and Chenyang Li and Mizuki Motoyoshi and Kosuke Katayama and Shuhei Amakawa and Minoru Fujishima",
year = "2013",
doi = "10.1109/APMC.2013.6695106",
language = "English",
isbn = "9781479914746",
series = "Asia-Pacific Microwave Conference Proceedings, APMC",
pages = "239--241",
booktitle = "2013 Asia-Pacific Microwave Conference Proceedings, APMC 2013",
note = "2013 3rd Asia-Pacific Microwave Conference, APMC 2013 ; Conference date: 05-11-2013 Through 08-11-2013",
}