Abstract
We investigated the effect of coimplantation of gallium(Ga) with carbon(C) and silicon(Si) in 6H-SiC by using Rutherford backscattering spectrometry-channeling(RBS-C) and Hall effect measurement. In the case of coimplantation of Ga with C we could not find the enhancement of the activation raw of acceptors in contrast with the cases of coimplantation of Al/C and B/C. In the case of coimplantation of Ga with Si we found a drastic retrenchment of the activation rate compared with the case of coimplantation of Al/Si and B/Si. We concluded that this result originated in the difference in the site preference between Al, B and Ga.
| Original language | English |
|---|---|
| Title of host publication | Materials Science Forum |
| Publisher | Trans Tech Publ Ltd |
| Volume | 338 |
| Publication status | Published - 2000 |
| Externally published | Yes |
| Event | ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: 1999 Oct 10 → 1999 Oct 15 |
Other
| Other | ICSCRM '99: The International Conference on Silicon Carbide and Related Materials |
|---|---|
| City | Research Triangle Park, NC, USA |
| Period | 99/10/10 → 99/10/15 |
ASJC Scopus subject areas
- Materials Science(all)