Common-emitter current-voltage characteristics of a pnp GaN bipolar junction transistor

Kazuhide Kumakura; Toshiki Makimoto; Naoki Kobayashi

doi:10.1063/1.1447593

Common-emitter current-voltage characteristics of a pnp GaN bipolar junction transistor

Kazuhide Kumakura^*, Toshiki Makimoto, Naoki Kobayashi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

We fabricated a pnp GaN bipolar junction transistor and investigated its common-emitter current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The base thickness was 0.12 μm and its doping concentration was estimated to be lower than mid-10¹⁷cm^-3. We have obtained a maximum common-emitter current gain of 50 at room temperature for collector current ranging from -10^-5 to -10^-4A.

Original language	English
Pages (from-to)	1225-1227
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	7
DOIs	https://doi.org/10.1063/1.1447593
Publication status	Published - 2002 Feb 18
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1447593

Cite this

@article{4aa4b97ca047457e8d833bef28460d65,

title = "Common-emitter current-voltage characteristics of a pnp GaN bipolar junction transistor",

abstract = "We fabricated a pnp GaN bipolar junction transistor and investigated its common-emitter current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The base thickness was 0.12 μm and its doping concentration was estimated to be lower than mid-1017cm-3. We have obtained a maximum common-emitter current gain of 50 at room temperature for collector current ranging from -10-5 to -10-4A.",

author = "Kazuhide Kumakura and Toshiki Makimoto and Naoki Kobayashi",

year = "2002",

month = feb,

day = "18",

doi = "10.1063/1.1447593",

language = "English",

volume = "80",

pages = "1225--1227",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - Common-emitter current-voltage characteristics of a pnp GaN bipolar junction transistor

AU - Kumakura, Kazuhide

AU - Makimoto, Toshiki

AU - Kobayashi, Naoki

PY - 2002/2/18

Y1 - 2002/2/18

N2 - We fabricated a pnp GaN bipolar junction transistor and investigated its common-emitter current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The base thickness was 0.12 μm and its doping concentration was estimated to be lower than mid-1017cm-3. We have obtained a maximum common-emitter current gain of 50 at room temperature for collector current ranging from -10-5 to -10-4A.

AB - We fabricated a pnp GaN bipolar junction transistor and investigated its common-emitter current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The base thickness was 0.12 μm and its doping concentration was estimated to be lower than mid-1017cm-3. We have obtained a maximum common-emitter current gain of 50 at room temperature for collector current ranging from -10-5 to -10-4A.

UR - http://www.scopus.com/inward/record.url?scp=79956023983&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79956023983&partnerID=8YFLogxK

U2 - 10.1063/1.1447593

DO - 10.1063/1.1447593

M3 - Article

AN - SCOPUS:79956023983

SN - 0003-6951

VL - 80

SP - 1225

EP - 1227

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Common-emitter current-voltage characteristics of a pnp GaN bipolar junction transistor

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this