Compact EUV source based on laser compton scattering between micro-bunch electron beam and CO₂ laser pulse

High-power extreme ultra-violet (EUV) sources are required for next generation semiconductor lithography. We start developing a compact EUV source in the spectral range of 13-14 nm, which is based on laser Compton scattering between a 7 MeV micro-bucnhed electron beam and a high intensity CO₂ laser pulse. The electron beam extracted from a DC photocathode gun is micro-bunched using laser modulation techinque with the Compton wavelength at a harmonic of the seeding laser [1] before the main laser Compton scattering for EUV radiation. A considerating scheme for the compact EUV source based on laser Compton scattering with micro-bunched electron beam and the anaritical study of micro-bunch generation are described in this papar. A plan of test experiment generating micro-bunched electron beam will be also introduced in this conference.