Comparison and distribution of minimum operation voltage in fully depleted silicon-on-thin-buried-oxide and bulk static random access memory cells

Tomoko Mizutani; Yoshiki Yamamoto; Hideki Makiyama; Hirofumi Shinohara; Toshiaki Iwamatsu; Hidekazu Oda; Nobuyuki Sugii; Toshiro Hiramoto

doi:10.7567/JJAP.53.04EC18

Comparison and distribution of minimum operation voltage in fully depleted silicon-on-thin-buried-oxide and bulk static random access memory cells

Tomoko Mizutani, Yoshiki Yamamoto, Hideki Makiyama, Hirofumi Shinohara, Toshiaki Iwamatsu, Hidekazu Oda, Nobuyuki Sugii, Toshiro Hiramoto

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The minimum operation voltage (V_min) of intrinsic channel fully depleted (FD) silicon-on-thin-buried-oxide (SOTB) static random access memory (SRAM) cells are measured and compared with those of conventional bulk SRAM cells in order to directly compare the worst cells. It is confirmed that the worst V_min of 1 kbit SOTB SRAM cells is half that of 1 kbit bulk cells. The distribution of V_min of 48 kbit SOTB and bulk SRAM cells are also measured and compared. The results show a great advantage of SOTB SRAM cells for lower power and lower voltage operation upon introducing SOTB, because of reduced V_TH variability.

Original language	English
Article number	04EC18
Journal	Japanese journal of applied physics
Volume	53
Issue number	4 SPEC. ISSUE
DOIs	https://doi.org/10.7567/JJAP.53.04EC18
Publication status	Published - 2014 Apr
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.7567/JJAP.53.04EC18

Cite this

@article{ea3c5e2bb1c84473b86d4ba62128ce9a,

title = "Comparison and distribution of minimum operation voltage in fully depleted silicon-on-thin-buried-oxide and bulk static random access memory cells",

abstract = "The minimum operation voltage (Vmin) of intrinsic channel fully depleted (FD) silicon-on-thin-buried-oxide (SOTB) static random access memory (SRAM) cells are measured and compared with those of conventional bulk SRAM cells in order to directly compare the worst cells. It is confirmed that the worst Vmin of 1 kbit SOTB SRAM cells is half that of 1 kbit bulk cells. The distribution of Vmin of 48 kbit SOTB and bulk SRAM cells are also measured and compared. The results show a great advantage of SOTB SRAM cells for lower power and lower voltage operation upon introducing SOTB, because of reduced VTH variability.",

author = "Tomoko Mizutani and Yoshiki Yamamoto and Hideki Makiyama and Hirofumi Shinohara and Toshiaki Iwamatsu and Hidekazu Oda and Nobuyuki Sugii and Toshiro Hiramoto",

year = "2014",

month = apr,

doi = "10.7567/JJAP.53.04EC18",

language = "English",

volume = "53",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 SPEC. ISSUE",

}

TY - JOUR

T1 - Comparison and distribution of minimum operation voltage in fully depleted silicon-on-thin-buried-oxide and bulk static random access memory cells

AU - Mizutani, Tomoko

AU - Yamamoto, Yoshiki

AU - Makiyama, Hideki

AU - Shinohara, Hirofumi

AU - Iwamatsu, Toshiaki

AU - Oda, Hidekazu

AU - Sugii, Nobuyuki

AU - Hiramoto, Toshiro

PY - 2014/4

Y1 - 2014/4

N2 - The minimum operation voltage (Vmin) of intrinsic channel fully depleted (FD) silicon-on-thin-buried-oxide (SOTB) static random access memory (SRAM) cells are measured and compared with those of conventional bulk SRAM cells in order to directly compare the worst cells. It is confirmed that the worst Vmin of 1 kbit SOTB SRAM cells is half that of 1 kbit bulk cells. The distribution of Vmin of 48 kbit SOTB and bulk SRAM cells are also measured and compared. The results show a great advantage of SOTB SRAM cells for lower power and lower voltage operation upon introducing SOTB, because of reduced VTH variability.

AB - The minimum operation voltage (Vmin) of intrinsic channel fully depleted (FD) silicon-on-thin-buried-oxide (SOTB) static random access memory (SRAM) cells are measured and compared with those of conventional bulk SRAM cells in order to directly compare the worst cells. It is confirmed that the worst Vmin of 1 kbit SOTB SRAM cells is half that of 1 kbit bulk cells. The distribution of Vmin of 48 kbit SOTB and bulk SRAM cells are also measured and compared. The results show a great advantage of SOTB SRAM cells for lower power and lower voltage operation upon introducing SOTB, because of reduced VTH variability.

UR - http://www.scopus.com/inward/record.url?scp=84903278212&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84903278212&partnerID=8YFLogxK

U2 - 10.7567/JJAP.53.04EC18

DO - 10.7567/JJAP.53.04EC18

M3 - Article

AN - SCOPUS:84903278212

SN - 0021-4922

VL - 53

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 4 SPEC. ISSUE

M1 - 04EC18

ER -

Comparison and distribution of minimum operation voltage in fully depleted silicon-on-thin-buried-oxide and bulk static random access memory cells

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this