The minimum operation voltage (Vmin) of intrinsic channel fully depleted (FD) silicon-on-thin-buried-oxide (SOTB) static random access memory (SRAM) cells are measured and compared with those of conventional bulk SRAM cells in order to directly compare the worst cells. It is confirmed that the worst Vmin of 1 kbit SOTB SRAM cells is half that of 1 kbit bulk cells. The distribution of Vmin of 48 kbit SOTB and bulk SRAM cells are also measured and compared. The results show a great advantage of SOTB SRAM cells for lower power and lower voltage operation upon introducing SOTB, because of reduced VTH variability.
|Journal||Japanese journal of applied physics|
|Issue number||4 SPEC. ISSUE|
|Publication status||Published - 2014 Apr|
ASJC Scopus subject areas
- Physics and Astronomy(all)