TY - JOUR
T1 - Comparison of Ag(In,Ga)Se2/Mo and Cu(In,Ga)Se2/Mo Interfaces in Solar Cells
AU - Zhang, Xianfeng
AU - Kobayashi, Masakazu
AU - Yamada, Akira
N1 - Funding Information:
This research was performed while X.F.Z. was a postdoc at Tokyo Tech. It was partially supported by the New Energy and Industrial Technology Development Organization (NEDO), Japan.
Publisher Copyright:
© 2017 American Chemical Society.
PY - 2017/5/17
Y1 - 2017/5/17
N2 - The structural and electrical properties of the junction at Ag(In,Ga)Se2AIGS/Mo, and Cu(In,Ga)Se2 CIGS/Mo layers were characterized. The region between the CIGS and Mo featured a MoSe2 layer with a layered hexagonal structure and thickness of 10-15 nm. The c-axis of the MoSe2 was oriented perpendicular to the Mo layer, and the c -value was 12.6 Å. However, no such layer was observed at the interface between AIGS and Mo. This result was also confirmed by energy-dispersive X-ray spectrometry and X-ray diffraction measurements of the MoSe2 layer. The CIGS/Mo with a MoSe2 layer formed an ohmic contact, while the AIGS/Mo without the MoSe2 layer formed a Schottky contact. This Schottky contact showed a barrier height of 0.8 ± 0.02 eV, a nonideality factor of 1.5 ± 0.1, and a series resistance of 370 ± 8 ω. A schematic band diagram of the AIGS/Mo junction was constructed on the basis of the above results.
AB - The structural and electrical properties of the junction at Ag(In,Ga)Se2AIGS/Mo, and Cu(In,Ga)Se2 CIGS/Mo layers were characterized. The region between the CIGS and Mo featured a MoSe2 layer with a layered hexagonal structure and thickness of 10-15 nm. The c-axis of the MoSe2 was oriented perpendicular to the Mo layer, and the c -value was 12.6 Å. However, no such layer was observed at the interface between AIGS and Mo. This result was also confirmed by energy-dispersive X-ray spectrometry and X-ray diffraction measurements of the MoSe2 layer. The CIGS/Mo with a MoSe2 layer formed an ohmic contact, while the AIGS/Mo without the MoSe2 layer formed a Schottky contact. This Schottky contact showed a barrier height of 0.8 ± 0.02 eV, a nonideality factor of 1.5 ± 0.1, and a series resistance of 370 ± 8 ω. A schematic band diagram of the AIGS/Mo junction was constructed on the basis of the above results.
KW - Schottky contact
KW - conversion efficiency
KW - interface
KW - ohmic contact
KW - solar cell
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U2 - 10.1021/acsami.7b02548
DO - 10.1021/acsami.7b02548
M3 - Article
C2 - 28448114
AN - SCOPUS:85019540156
SN - 1944-8244
VL - 9
SP - 16215
EP - 16220
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
IS - 19
ER -