Comparison of high-purity-ozone oxidation on Si(111) and Si(100)

A. Kurokawa*, S. Ichimura, D. W. Moon

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

10 Citations (Scopus)


The oxidation of Si(111) and Si(100) surfaces with the high-purity ozone (more than 98 mole %) was investigated with X-ray photoelectron spectroscopy (XPS). Thin oxide less than 3 nm thickens was formed in an experimental chamber and the results showed that ozone oxidizes the (111) surface faster than (100) surface. Ozone does not show the temperature dependence on oxidation within the temperature range of 250-500 degree C for both (111) and (100) surfaces. Ozone proceeds the oxide formation at 700 degree C where oxygen does not proceed oxide formation rapidly.

Original languageEnglish
Pages (from-to)359-364
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1997
Externally publishedYes
EventProceedings of the 1997 MRS Spring Meeting - San Francisco, CA, USA
Duration: 1997 Mar 311997 Apr 3

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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