Comprehensive approach to MuGFET metrology

G. F. Lorusso; P. Leray; T. Vandeweyer; M. Ercken; C. Delvaux; I. Pollentier; S. Cheng; N. Collaert; R. Rooyackers; B. Degroote; M. Jurczak; S. Biesemans; O. Richard; H. Bender; A. Azordegan; J. McCormack; S. Shirke; J. Prochazka; Timothy Edward Long

doi:10.1117/12.656076

Comprehensive approach to MuGFET metrology

G. F. Lorusso^*, P. Leray, T. Vandeweyer, M. Ercken, C. Delvaux, I. Pollentier, S. Cheng, N. Collaert, R. Rooyackers, B. Degroote, M. Jurczak, S. Biesemans, O. Richard, H. Bender, A. Azordegan, J. McCormack, S. Shirke, J. Prochazka, Timothy Edward Long

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

As we move forward to the 45 and 32nm node, MuGFET's (Multi-Gate Field-Effect Transistor) are considered more and more as a necessary alternative to keep pace with Moore's Law. If proven manufacturable, MuGFET's could eventually replace conventional CMOS transistors within a few years. The ability to perform proper and extensive metrology in a production environment is then essential. We investigate here some of the requirements of MuGFET metrology. Accuracy and line width roughness (LWR) metrology will play an essential role, because the small dimension of the features involved. 3D metrology is required when dealing with non-planar devices. Sophisticated check of optical proximity correction (OPC) is needed in order to ensure that the design is respected. We propose here some possible solutions to address the needs of MuGFET metrology in a production-worthy fashion. A procedure to calibrate CDSEM to TEM for accuracy is developed. We performed LWR metrology of fins in a fully automated way by using CDSEM, while the 3D information is obtained by means of scatterometry. Finally, we will discuss the application of design-based metrology (DBM) to MuGFET OPC validation.

Original language	English
Title of host publication	Metrology, Inspection, and Process Control for Microlithography XX
Volume	6152 I
DOIs	https://doi.org/10.1117/12.656076
Publication status	Published - 2006 Jul 10
Externally published	Yes
Event	Metrology, Inspection, and Process Control for Microlithography XX - San Jose, CA, United States Duration: 2006 Jan 20 → 2006 Jan 23

Other

Other	Metrology, Inspection, and Process Control for Microlithography XX
Country/Territory	United States
City	San Jose, CA
Period	06/1/20 → 06/1/23

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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Lorusso, G. F., Leray, P., Vandeweyer, T., Ercken, M., Delvaux, C., Pollentier, I., Cheng, S., Collaert, N., Rooyackers, R., Degroote, B., Jurczak, M., Biesemans, S., Richard, O., Bender, H., Azordegan, A., McCormack, J., Shirke, S., Prochazka, J., & Long, T. E. (2006). Comprehensive approach to MuGFET metrology. In Metrology, Inspection, and Process Control for Microlithography XX (Vol. 6152 I). [615219] https://doi.org/10.1117/12.656076

Lorusso, GF, Leray, P, Vandeweyer, T, Ercken, M, Delvaux, C, Pollentier, I, Cheng, S, Collaert, N, Rooyackers, R, Degroote, B, Jurczak, M, Biesemans, S, Richard, O, Bender, H, Azordegan, A, McCormack, J, Shirke, S, Prochazka, J & Long, TE 2006, Comprehensive approach to MuGFET metrology. in Metrology, Inspection, and Process Control for Microlithography XX. vol. 6152 I, 615219, Metrology, Inspection, and Process Control for Microlithography XX, San Jose, CA, United States, 06/1/20. https://doi.org/10.1117/12.656076

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title = "Comprehensive approach to MuGFET metrology",

abstract = "As we move forward to the 45 and 32nm node, MuGFET's (Multi-Gate Field-Effect Transistor) are considered more and more as a necessary alternative to keep pace with Moore's Law. If proven manufacturable, MuGFET's could eventually replace conventional CMOS transistors within a few years. The ability to perform proper and extensive metrology in a production environment is then essential. We investigate here some of the requirements of MuGFET metrology. Accuracy and line width roughness (LWR) metrology will play an essential role, because the small dimension of the features involved. 3D metrology is required when dealing with non-planar devices. Sophisticated check of optical proximity correction (OPC) is needed in order to ensure that the design is respected. We propose here some possible solutions to address the needs of MuGFET metrology in a production-worthy fashion. A procedure to calibrate CDSEM to TEM for accuracy is developed. We performed LWR metrology of fins in a fully automated way by using CDSEM, while the 3D information is obtained by means of scatterometry. Finally, we will discuss the application of design-based metrology (DBM) to MuGFET OPC validation.",

author = "Lorusso, {G. F.} and P. Leray and T. Vandeweyer and M. Ercken and C. Delvaux and I. Pollentier and S. Cheng and N. Collaert and R. Rooyackers and B. Degroote and M. Jurczak and S. Biesemans and O. Richard and H. Bender and A. Azordegan and J. McCormack and S. Shirke and J. Prochazka and Long, {Timothy Edward}",

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AU - Lorusso, G. F.

AU - Leray, P.

AU - Vandeweyer, T.

AU - Ercken, M.

AU - Delvaux, C.

AU - Pollentier, I.

AU - Cheng, S.

AU - Collaert, N.

AU - Rooyackers, R.

AU - Degroote, B.

AU - Jurczak, M.

AU - Biesemans, S.

AU - Richard, O.

AU - Bender, H.

AU - Azordegan, A.

AU - McCormack, J.

AU - Shirke, S.

AU - Prochazka, J.

AU - Long, Timothy Edward

PY - 2006/7/10

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N2 - As we move forward to the 45 and 32nm node, MuGFET's (Multi-Gate Field-Effect Transistor) are considered more and more as a necessary alternative to keep pace with Moore's Law. If proven manufacturable, MuGFET's could eventually replace conventional CMOS transistors within a few years. The ability to perform proper and extensive metrology in a production environment is then essential. We investigate here some of the requirements of MuGFET metrology. Accuracy and line width roughness (LWR) metrology will play an essential role, because the small dimension of the features involved. 3D metrology is required when dealing with non-planar devices. Sophisticated check of optical proximity correction (OPC) is needed in order to ensure that the design is respected. We propose here some possible solutions to address the needs of MuGFET metrology in a production-worthy fashion. A procedure to calibrate CDSEM to TEM for accuracy is developed. We performed LWR metrology of fins in a fully automated way by using CDSEM, while the 3D information is obtained by means of scatterometry. Finally, we will discuss the application of design-based metrology (DBM) to MuGFET OPC validation.

AB - As we move forward to the 45 and 32nm node, MuGFET's (Multi-Gate Field-Effect Transistor) are considered more and more as a necessary alternative to keep pace with Moore's Law. If proven manufacturable, MuGFET's could eventually replace conventional CMOS transistors within a few years. The ability to perform proper and extensive metrology in a production environment is then essential. We investigate here some of the requirements of MuGFET metrology. Accuracy and line width roughness (LWR) metrology will play an essential role, because the small dimension of the features involved. 3D metrology is required when dealing with non-planar devices. Sophisticated check of optical proximity correction (OPC) is needed in order to ensure that the design is respected. We propose here some possible solutions to address the needs of MuGFET metrology in a production-worthy fashion. A procedure to calibrate CDSEM to TEM for accuracy is developed. We performed LWR metrology of fins in a fully automated way by using CDSEM, while the 3D information is obtained by means of scatterometry. Finally, we will discuss the application of design-based metrology (DBM) to MuGFET OPC validation.

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BT - Metrology, Inspection, and Process Control for Microlithography XX

T2 - Metrology, Inspection, and Process Control for Microlithography XX

Y2 - 20 January 2006 through 23 January 2006

ER -

Comprehensive approach to MuGFET metrology

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