Comprehensive thickness-dependent power-law of breakdown in CMOS gate oxides

A. Hiraiwa; D. Ishikawa

doi:10.1109/RELPHY.2006.251290

Comprehensive thickness-dependent power-law of breakdown in CMOS gate oxides

A. Hiraiwa^*, D. Ishikawa

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	IEEE International Reliability Physics Symposium Proceedings
Pages	617-618
Number of pages	2
DOIs	https://doi.org/10.1109/RELPHY.2006.251290
Publication status	Published - 2006
Externally published	Yes
Event	44th Annual IEEE International Reliability Physics Symposium, IRPS 2006 - San Jose, CA Duration: 2006 Mar 26 → 2006 Mar 30

Other

Other	44th Annual IEEE International Reliability Physics Symposium, IRPS 2006
City	San Jose, CA
Period	06/3/26 → 06/3/30

ASJC Scopus subject areas

Engineering(all)

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10.1109/RELPHY.2006.251290

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@inproceedings{a8ff9992a7b149a1b9d4dc9867340ad5,

title = "Comprehensive thickness-dependent power-law of breakdown in CMOS gate oxides",

author = "A. Hiraiwa and D. Ishikawa",

year = "2006",

doi = "10.1109/RELPHY.2006.251290",

language = "English",

isbn = "0780394992",

pages = "617--618",

booktitle = "IEEE International Reliability Physics Symposium Proceedings",

note = "44th Annual IEEE International Reliability Physics Symposium, IRPS 2006 ; Conference date: 26-03-2006 Through 30-03-2006",

}

TY - GEN

T1 - Comprehensive thickness-dependent power-law of breakdown in CMOS gate oxides

AU - Hiraiwa, A.

AU - Ishikawa, D.

PY - 2006

Y1 - 2006

UR - http://www.scopus.com/inward/record.url?scp=34250724895&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34250724895&partnerID=8YFLogxK

U2 - 10.1109/RELPHY.2006.251290

DO - 10.1109/RELPHY.2006.251290

M3 - Conference contribution

AN - SCOPUS:34250724895

SN - 0780394992

SN - 0780394984

SN - 9780780394988

SP - 617

EP - 618

BT - IEEE International Reliability Physics Symposium Proceedings

T2 - 44th Annual IEEE International Reliability Physics Symposium, IRPS 2006

Y2 - 26 March 2006 through 30 March 2006

ER -

Comprehensive thickness-dependent power-law of breakdown in CMOS gate oxides

Other

ASJC Scopus subject areas

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