Concerning the dependence of photoconductivity on photogeneration rate in intrinsic amorphous semiconductors

H. C. Card*, I. Kato, L. Chow, H. Watanabe, K. C. Kao

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review


    A simplified treatment of recombination, quasi-Fermi levels and photoconductivity in pure (undoped) amorphous semiconductors is presented assuming a symmetrical Cohen-Fritzsche-Ovshinsky distribution of localized bandgap states, with donorlike states of density decreasing exponentially with increases in energy from the valence band (mobility) edge: and acceptorlike states of exponentially decreasing density with decreases in energy from the conduction band edge. Recombination proceeds by Shockley-Read-Hall capture processes, but due account is taken of the dependence of cross sections on whether Coulombic or neutral capture is present in each case The ratio of photoconductivity to dark conductivity (σphdark) is calculated for parameters expected to correspond to (hdrogenated) intrinsic amorphous silicon. The dependence of this ratio upon the photogeneration rate (Gph) involves a single adjustable parameter, which represents the rate of decay of the density of gap states with energy away from the band edges. Comparison of experimental data for σphdark vs. Gph with this model provides for an estimate of the gap-state energy distribution.

    Original languageEnglish
    Pages (from-to)175-182
    Number of pages8
    JournalSolar Energy Materials
    Issue number2
    Publication statusPublished - 1982

    ASJC Scopus subject areas

    • Engineering(all)


    Dive into the research topics of 'Concerning the dependence of photoconductivity on photogeneration rate in intrinsic amorphous semiconductors'. Together they form a unique fingerprint.

    Cite this