Conductance quantization and synaptic behavior in a Ta 2O 5-based atomic switch

Tohru Tsuruoka*, Tsuyoshi Hasegawa, Kazuya Terabe, Masakazu Aono

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

150 Citations (Scopus)


Quantized conductance was observed in a cation-migration-based resistive switching memory cell with a simple metalinsulatormetal (MIM) structure using a thin Ta 2O 5 layer. The observed conductance changes are attributed to the formation and dissolution of a metal filament with an atomic point contact of different integer multiples in the Ta 2O 5 layer. The results demonstrate that atomic point contacts can be realized in an oxide-based MIM structure that functions as a nanogap-based atomic switch (Terabe etal 2005 Nature 433 47). By applying consecutive voltage pulses at periodic intervals of different times, we also observed an effect analogous to the long-term potentiation of biological synapses, which shows that the oxide-based atomic switch has potential for use as an essential building block of neural computing systems.

Original languageEnglish
Article number435705
Issue number43
Publication statusPublished - 2012 Nov 2
Externally publishedYes

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering


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