Abstract
The cone structure formation in epitaxial Si films produced by chemical vapor deposition (CVD) was reported. Measures to prevent cone formation were proposed by studying the cause of the different growth rates between the cone and the film. The shape of the cone was analyzed to precisely determine the growth rate of each crystallographic plane.
| Original language | English |
|---|---|
| Pages (from-to) | 87-89 |
| Number of pages | 3 |
| Journal | Advanced Materials |
| Volume | 14 |
| Issue number | 9 |
| Publication status | Published - 2002 May 3 |
| Externally published | Yes |
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering