Conjugated-polymer-based lateral heterostructures defined by high-resolution photolithography

Jui Fen Chang*, Michael C. Gwinner, Mario Caironi, Tomo Sakanoue, Henning Sirringhaus

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

73 Citations (Scopus)


Solution processing of polymer semiconductors provides a new paradigm for large-area electronics manufacturing on flexible substrates, but it also severely restricts the realization of interesting advanced device architectures, such as lateral heterostructures with defined interfaces, which are easily accessible with inorganic materials using photolithography. This is because polymer semiconductors degrade, swell, or dissolve during conventional photoresist processing. Here a versatile, high-resolution photolithographic method is demonstrated for patterning of polymer semiconductors and exemplify this with high-performance p-type and n-type field-effect transistors (FETs) in both bottom-and top-gate architectures, as well as ambipolar light-emitting field-effect transistors (LEFETs), in which the recombination zone can be pinned at a photolithographically defined lateral heterojunction between two semiconducting polymers. The technique therefore enables the realization of a broad range of novel device architectures while retaining optimum materials performance.

Original languageEnglish
Pages (from-to)2825-2832
Number of pages8
JournalAdvanced Functional Materials
Issue number17
Publication statusPublished - 2010 Sept 9
Externally publishedYes

ASJC Scopus subject areas

  • Biomaterials
  • Electrochemistry
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials


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