Consideration of atom movement during Si surface reconstruction

I. Ohdomari*, T. Watanabe, K. Kumamoto, T. Hoshino

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Si(111) surface reconstructions are classified into two families, the 2 x 2 family (2 x 2, c2 x 4, c2 x 8 and √3 x √3) and n x n DAS family. By in-situ atomic scale observation of Si(111) surface reconstruction and by a statistical argument on the nucleation of a daughter phase in Si(111) matrix, we have found that the 2 x 2 family is a result of random motion of adatoms on a Si(111)-1 x 1 substrate, while the n x n DAS family can never be formed only by the movement of adatoms but some cooperative movement of substrate Si atoms is necessary.

Original languageEnglish
Pages (from-to)245-258
Number of pages14
JournalPhase Transitions
Issue number4 SEC. A
Publication statusPublished - 1997


  • Cooperative movement
  • DAS structure
  • Random motion
  • Scanning Tunneling Microscopy
  • Si(111)

ASJC Scopus subject areas

  • Instrumentation
  • General Materials Science


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