@inproceedings{ee8db17327864449955e5cc221313a17,
title = "Continuous-wave operation of ultra-short cavity distributed bragg reflector lasers on Si substrates",
abstract = "We have fabricated ultra-short cavity membrane distributed Bragg reflector lasers on SiO2/Si substrate for constructing chip-to-chip optical links. To reduce the power consumption of transmitters, reducing cavity length is important. Since the membrane structure enables us to achieve a large optical confinement factor and a surface grating with a large coupling coefficient, we have successfully reduced cavity length to 10 μm. The device exhibits a threshold current of 0.17 mA with a side-mode suppression ratio of 39.1 dB. We have also demonstrated direct modulation using 25.8-Gbit/s NRZ signal and achieved eye opening with a bias current of 1.8 mA.",
keywords = "DBR laser, III-V on Si, membrane laser, short cavity laser, wafer bonding",
author = "Koji Takeda and Erina Kanno and Takuro Fujii and Koichi Hasebe and Tsuyoshi Yamamoto and Takaaki Kakitsuka and Shinji Matsuo",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 2016 Compound Semiconductor Week, CSW 2016 ; Conference date: 26-06-2016 Through 30-06-2016",
year = "2016",
month = aug,
day = "1",
doi = "10.1109/ICIPRM.2016.7528750",
language = "English",
series = "2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016",
}