Control of carrier collection efficiency in n+p diode with retrograde well and epitaxial layers

Takehisa Kishimoto; Mikio Takai; Yoshikazu Ohno; Tadashi Nishimura; Masahide Inuishi

doi:10.1143/jjap.36.3460

Control of carrier collection efficiency in n⁺p diode with retrograde well and epitaxial layers

Takehisa Kishimoto^*, Mikio Takai, Yoshikazu Ohno, Tadashi Nishimura, Masahide Inuishi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The effect of buried implanted layers against carrier collection has been investigated by ion-beam-induced-current (IBIC) measurement. The IBIC measurement revealed that the retrograde well structure is more effective in suppressing soft errors than are conventional well structures in epitaxial substrates. The collection of charge carriers induced by 1.3 MeV proton microprobe irradiation could be reduced by a buried layer formed at a different boron dose. The carrier collection efficiency of the diode with a twin well (i.e., retrograde well) with a higher dose can be reduced to 50% that of a diode with a twin wells in an epitaxial layer.

Original language	English
Pages (from-to)	3460-3462
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	36
Issue number	6 A
DOIs	https://doi.org/10.1143/jjap.36.3460
Publication status	Published - 1997 Jun
Externally published	Yes

Keywords

Charge collection
Dynamic random-access memory
Epitaxial wafer
High-energy ion-implantation
Ion-beam-induced current
Nuclear microprobe
Soft error

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.36.3460

Cite this

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title = "Control of carrier collection efficiency in n+p diode with retrograde well and epitaxial layers",

abstract = "The effect of buried implanted layers against carrier collection has been investigated by ion-beam-induced-current (IBIC) measurement. The IBIC measurement revealed that the retrograde well structure is more effective in suppressing soft errors than are conventional well structures in epitaxial substrates. The collection of charge carriers induced by 1.3 MeV proton microprobe irradiation could be reduced by a buried layer formed at a different boron dose. The carrier collection efficiency of the diode with a twin well (i.e., retrograde well) with a higher dose can be reduced to 50% that of a diode with a twin wells in an epitaxial layer.",

keywords = "Charge collection, Dynamic random-access memory, Epitaxial wafer, High-energy ion-implantation, Ion-beam-induced current, Nuclear microprobe, Soft error",

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year = "1997",

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T1 - Control of carrier collection efficiency in n+p diode with retrograde well and epitaxial layers

AU - Kishimoto, Takehisa

AU - Takai, Mikio

AU - Ohno, Yoshikazu

AU - Nishimura, Tadashi

AU - Inuishi, Masahide

PY - 1997/6

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N2 - The effect of buried implanted layers against carrier collection has been investigated by ion-beam-induced-current (IBIC) measurement. The IBIC measurement revealed that the retrograde well structure is more effective in suppressing soft errors than are conventional well structures in epitaxial substrates. The collection of charge carriers induced by 1.3 MeV proton microprobe irradiation could be reduced by a buried layer formed at a different boron dose. The carrier collection efficiency of the diode with a twin well (i.e., retrograde well) with a higher dose can be reduced to 50% that of a diode with a twin wells in an epitaxial layer.

AB - The effect of buried implanted layers against carrier collection has been investigated by ion-beam-induced-current (IBIC) measurement. The IBIC measurement revealed that the retrograde well structure is more effective in suppressing soft errors than are conventional well structures in epitaxial substrates. The collection of charge carriers induced by 1.3 MeV proton microprobe irradiation could be reduced by a buried layer formed at a different boron dose. The carrier collection efficiency of the diode with a twin well (i.e., retrograde well) with a higher dose can be reduced to 50% that of a diode with a twin wells in an epitaxial layer.

KW - Charge collection

KW - Dynamic random-access memory

KW - Epitaxial wafer

KW - High-energy ion-implantation

KW - Ion-beam-induced current

KW - Nuclear microprobe

KW - Soft error

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