Control of carrier concentration in Bi-2212

S. Yamashita*, T. Kasai, T. Fujii, T. Watanabe, A. Matsuda

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


We realized highly underdoped Bi-2212 crystals by using a Bi substitution into a Sr site (x), together with the excess oxygen (δ) control. The samples with x = 0-0.3 were grown by a traveling solvent floating zone method. For each x, δ was varied using the precision annealing method [1]. Under several assumptions, the effective Bi valence was evaluated to be +2.2, which is much lower than the formal valence +3. This indicates that the Bi substitution accompanies additional uptake in excess oxygen. The x dependent δ-doping level p relation and the observed shrink in the c-axis length are consistent with this assumption. Based on the decomposition phase diagram obtained in this study, Tc of 22 K was realized by careful annealing treatments. The samples showed a superconducting volume fraction of over 50%.

Original languageEnglish
Pages (from-to)S170-S172
JournalPhysica C: Superconductivity and its applications
Issue numberSUPPL.1
Publication statusPublished - 2010 Dec
Externally publishedYes


  • Bi-2212
  • STM
  • Superconductor
  • Underdoped

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering


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