Control of carrier density by self-assembled monolayers in organic field-effect transistors

S. Kobayashi; T. Nishikawa; T. Takenobu; S. Mori; T. Shimoda; T. Mitani; H. Shimotani; N. Yoshimoto; S. Ogawa; Y. Iwasa

doi:10.1038/nmat1105

Control of carrier density by self-assembled monolayers in organic field-effect transistors

S. Kobayashi, T. Nishikawa, T. Takenobu, S. Mori, T. Shimoda, T. Mitani, H. Shimotani, N. Yoshimoto, S. Ogawa, Y. Iwasa^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

822 Citations (Scopus)

Abstract

The control of carrier density by self-assembled monolayers (SAM) in organic field-effect transistors is discussed. Organic thin-film transistors show high field-effect mobility in several organic materials. In the field-effect device structures, the conduction channel exists at the interface between organic thin films and SiO₂ gate insulators. It is found that SAM with fluorine and amino groups accumulate holes and electrons respectively in the transistor channel.

Original language	English
Pages (from-to)	317-322
Number of pages	6
Journal	Nature Materials
Volume	3
Issue number	5
DOIs	https://doi.org/10.1038/nmat1105
Publication status	Published - 2004 May
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)

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10.1038/nmat1105

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@article{55d96e97457a4b518339d0efa68c91b6,

title = "Control of carrier density by self-assembled monolayers in organic field-effect transistors",

abstract = "The control of carrier density by self-assembled monolayers (SAM) in organic field-effect transistors is discussed. Organic thin-film transistors show high field-effect mobility in several organic materials. In the field-effect device structures, the conduction channel exists at the interface between organic thin films and SiO2 gate insulators. It is found that SAM with fluorine and amino groups accumulate holes and electrons respectively in the transistor channel.",

author = "S. Kobayashi and T. Nishikawa and T. Takenobu and S. Mori and T. Shimoda and T. Mitani and H. Shimotani and N. Yoshimoto and S. Ogawa and Y. Iwasa",

year = "2004",

month = may,

doi = "10.1038/nmat1105",

language = "English",

volume = "3",

pages = "317--322",

journal = "Nature Materials",

issn = "1476-1122",

publisher = "Nature Publishing Group",

number = "5",

}

TY - JOUR

T1 - Control of carrier density by self-assembled monolayers in organic field-effect transistors

AU - Kobayashi, S.

AU - Nishikawa, T.

AU - Takenobu, T.

AU - Mori, S.

AU - Shimoda, T.

AU - Mitani, T.

AU - Shimotani, H.

AU - Yoshimoto, N.

AU - Ogawa, S.

AU - Iwasa, Y.

PY - 2004/5

Y1 - 2004/5

N2 - The control of carrier density by self-assembled monolayers (SAM) in organic field-effect transistors is discussed. Organic thin-film transistors show high field-effect mobility in several organic materials. In the field-effect device structures, the conduction channel exists at the interface between organic thin films and SiO2 gate insulators. It is found that SAM with fluorine and amino groups accumulate holes and electrons respectively in the transistor channel.

AB - The control of carrier density by self-assembled monolayers (SAM) in organic field-effect transistors is discussed. Organic thin-film transistors show high field-effect mobility in several organic materials. In the field-effect device structures, the conduction channel exists at the interface between organic thin films and SiO2 gate insulators. It is found that SAM with fluorine and amino groups accumulate holes and electrons respectively in the transistor channel.

UR - http://www.scopus.com/inward/record.url?scp=2342639588&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2342639588&partnerID=8YFLogxK

U2 - 10.1038/nmat1105

DO - 10.1038/nmat1105

M3 - Article

C2 - 15064756

AN - SCOPUS:2342639588

SN - 1476-1122

VL - 3

SP - 317

EP - 322

JO - Nature Materials

JF - Nature Materials

IS - 5

ER -

Control of carrier density by self-assembled monolayers in organic field-effect transistors

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