We present a systematic study of the structural and electrical properties of electron-doped infinite-layer Sr0.875La0.125CuO2 (SLCO) thin films grown on BaySr1-yTiO3 (BSTO; y = 0.2-0.7) buffer layers. The BSTO (y = 0.2-0.6) buffer layers were found to allow the coherent growth of SLCO thin films. The coherently tensile-strained SLCO thin films grown on BSTO (y = 0.6) buffer layers at a low deposition rate of 0.2nm/min showed a low room-temperature resistivity (118 μÙcm) and a high Tc (36 K). All the other SLCO thin films exhibited a reduced Tc of around 20 K. The present results are discussed in terms of correlation among epitaxial strain, cSLCO/aSLCO ratio, and Tc.
ASJC Scopus subject areas
- Physics and Astronomy(all)