Controlled superconductivity in infinite-layer Sr0.875La0.125CuO2 films sputter-deposited on BaySr1-yTiO3 buffer layers

Keita Sakuma; Masataka Ito; Tetsuya Hajiri; Kenji Ueda; Hidefumi Asano

doi:10.7567/APEX.9.023101

Controlled superconductivity in infinite-layer Sr_0.875La_0.125CuO₂ films sputter-deposited on BaySr_1-yTiO₃ buffer layers

Keita Sakuma, Masataka Ito, Tetsuya Hajiri, Kenji Ueda, Hidefumi Asano

Research output: Contribution to journal › Article › peer-review

Abstract

We present a systematic study of the structural and electrical properties of electron-doped infinite-layer Sr_0.875La_0.125CuO₂ (SLCO) thin films grown on BaySr_1-yTiO₃ (BSTO; y = 0.2-0.7) buffer layers. The BSTO (y = 0.2-0.6) buffer layers were found to allow the coherent growth of SLCO thin films. The coherently tensile-strained SLCO thin films grown on BSTO (y = 0.6) buffer layers at a low deposition rate of 0.2nm/min showed a low room-temperature resistivity (118 μÙcm) and a high T_c (36 K). All the other SLCO thin films exhibited a reduced T_c of around 20 K. The present results are discussed in terms of correlation among epitaxial strain, cSLCO/aSLCO ratio, and T_c.

Original language	English
Article number	023101
Journal	Applied Physics Express
Volume	9
Issue number	2
DOIs	https://doi.org/10.7567/APEX.9.023101
Publication status	Published - 2016 Feb
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Controlled superconductivity in infinite-layer Sr0.875La0.125CuO2 films sputter-deposited on BaySr1-yTiO3 buffer layers",

abstract = "We present a systematic study of the structural and electrical properties of electron-doped infinite-layer Sr0.875La0.125CuO2 (SLCO) thin films grown on BaySr1-yTiO3 (BSTO; y = 0.2-0.7) buffer layers. The BSTO (y = 0.2-0.6) buffer layers were found to allow the coherent growth of SLCO thin films. The coherently tensile-strained SLCO thin films grown on BSTO (y = 0.6) buffer layers at a low deposition rate of 0.2nm/min showed a low room-temperature resistivity (118 μ{\`U}cm) and a high Tc (36 K). All the other SLCO thin films exhibited a reduced Tc of around 20 K. The present results are discussed in terms of correlation among epitaxial strain, cSLCO/aSLCO ratio, and Tc.",

author = "Keita Sakuma and Masataka Ito and Tetsuya Hajiri and Kenji Ueda and Hidefumi Asano",

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AU - Sakuma, Keita

AU - Ito, Masataka

AU - Hajiri, Tetsuya

AU - Ueda, Kenji

AU - Asano, Hidefumi

PY - 2016/2

Y1 - 2016/2

N2 - We present a systematic study of the structural and electrical properties of electron-doped infinite-layer Sr0.875La0.125CuO2 (SLCO) thin films grown on BaySr1-yTiO3 (BSTO; y = 0.2-0.7) buffer layers. The BSTO (y = 0.2-0.6) buffer layers were found to allow the coherent growth of SLCO thin films. The coherently tensile-strained SLCO thin films grown on BSTO (y = 0.6) buffer layers at a low deposition rate of 0.2nm/min showed a low room-temperature resistivity (118 μÙcm) and a high Tc (36 K). All the other SLCO thin films exhibited a reduced Tc of around 20 K. The present results are discussed in terms of correlation among epitaxial strain, cSLCO/aSLCO ratio, and Tc.

AB - We present a systematic study of the structural and electrical properties of electron-doped infinite-layer Sr0.875La0.125CuO2 (SLCO) thin films grown on BaySr1-yTiO3 (BSTO; y = 0.2-0.7) buffer layers. The BSTO (y = 0.2-0.6) buffer layers were found to allow the coherent growth of SLCO thin films. The coherently tensile-strained SLCO thin films grown on BSTO (y = 0.6) buffer layers at a low deposition rate of 0.2nm/min showed a low room-temperature resistivity (118 μÙcm) and a high Tc (36 K). All the other SLCO thin films exhibited a reduced Tc of around 20 K. The present results are discussed in terms of correlation among epitaxial strain, cSLCO/aSLCO ratio, and Tc.

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Controlled superconductivity in infinite-layer Sr_0.875La_0.125CuO₂ films sputter-deposited on BaySr_1-yTiO₃ buffer layers

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