Controlling of the Dirac band states of Pb-deposited graphene by using work function difference

Y. Tsujikawa; M. Sakamoto; Y. Yokoi; M. Imamura; K. Takahashi; R. Hobara; T. Uchihashi; A. Takayama

doi:10.1063/5.0013797

Controlling of the Dirac band states of Pb-deposited graphene by using work function difference

Y. Tsujikawa, M. Sakamoto, Y. Yokoi, M. Imamura, K. Takahashi, R. Hobara, T. Uchihashi, A. Takayama^*

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We have performed scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) in Pb-deposited bilayer graphene (BLG) on the SiC(0001) substrate to investigate the dependence of the electronic structures on the Pb-deposition amount. We have observed that the Pb atoms form islands by STM and the πbands of the BLG shift toward the Fermi level by ARPES. This hole-doping-like energy shift is enhanced as the amount of Pb is increased, and we were able to tune the Dirac gap to the Fermi level by 4 ML deposition. Considering the band dispersion, we suggest that the hole-doping-like effect is related to the difference between the work functions of Pb islands and BLG/SiC; the work function of BLG/SiC is lower than that of Pb. Our results propose an easy way of band tuning for graphene with an appropriate selection of both the substrate and deposited material.

Original language	English
Article number	085314
Journal	AIP Advances
Volume	10
Issue number	8
DOIs	https://doi.org/10.1063/5.0013797
Publication status	Published - 2020 Aug 1

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/5.0013797

Cite this

@article{17e158ae47d141a5a81d3feb803a5fd5,

title = "Controlling of the Dirac band states of Pb-deposited graphene by using work function difference",

abstract = "We have performed scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) in Pb-deposited bilayer graphene (BLG) on the SiC(0001) substrate to investigate the dependence of the electronic structures on the Pb-deposition amount. We have observed that the Pb atoms form islands by STM and the πbands of the BLG shift toward the Fermi level by ARPES. This hole-doping-like energy shift is enhanced as the amount of Pb is increased, and we were able to tune the Dirac gap to the Fermi level by 4 ML deposition. Considering the band dispersion, we suggest that the hole-doping-like effect is related to the difference between the work functions of Pb islands and BLG/SiC; the work function of BLG/SiC is lower than that of Pb. Our results propose an easy way of band tuning for graphene with an appropriate selection of both the substrate and deposited material.",

author = "Y. Tsujikawa and M. Sakamoto and Y. Yokoi and M. Imamura and K. Takahashi and R. Hobara and T. Uchihashi and A. Takayama",

note = "Funding Information: The authors would like to thank S. Hasegawa (University of Tokyo) for his participation in the discussion. This work was supported by JSPS (KAKEN-HI, Grant No. 19H04398). A.T. acknowledges the financial support by the NIMS Joint Research Hub Program. The photoemission experiments were performed at Saga University Beamline (Grant No. SAGA-LS/BL13) with a proposal of Grant Nos. H30-204P and H30-307P under the support of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan. Publisher Copyright: {\textcopyright} 2020 Author(s).",

year = "2020",

month = aug,

day = "1",

doi = "10.1063/5.0013797",

language = "English",

volume = "10",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics Publising LLC",

number = "8",

}

TY - JOUR

T1 - Controlling of the Dirac band states of Pb-deposited graphene by using work function difference

AU - Tsujikawa, Y.

AU - Sakamoto, M.

AU - Yokoi, Y.

AU - Imamura, M.

AU - Takahashi, K.

AU - Hobara, R.

AU - Uchihashi, T.

AU - Takayama, A.

N1 - Funding Information: The authors would like to thank S. Hasegawa (University of Tokyo) for his participation in the discussion. This work was supported by JSPS (KAKEN-HI, Grant No. 19H04398). A.T. acknowledges the financial support by the NIMS Joint Research Hub Program. The photoemission experiments were performed at Saga University Beamline (Grant No. SAGA-LS/BL13) with a proposal of Grant Nos. H30-204P and H30-307P under the support of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan. Publisher Copyright: © 2020 Author(s).

PY - 2020/8/1

Y1 - 2020/8/1

N2 - We have performed scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) in Pb-deposited bilayer graphene (BLG) on the SiC(0001) substrate to investigate the dependence of the electronic structures on the Pb-deposition amount. We have observed that the Pb atoms form islands by STM and the πbands of the BLG shift toward the Fermi level by ARPES. This hole-doping-like energy shift is enhanced as the amount of Pb is increased, and we were able to tune the Dirac gap to the Fermi level by 4 ML deposition. Considering the band dispersion, we suggest that the hole-doping-like effect is related to the difference between the work functions of Pb islands and BLG/SiC; the work function of BLG/SiC is lower than that of Pb. Our results propose an easy way of band tuning for graphene with an appropriate selection of both the substrate and deposited material.

AB - We have performed scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) in Pb-deposited bilayer graphene (BLG) on the SiC(0001) substrate to investigate the dependence of the electronic structures on the Pb-deposition amount. We have observed that the Pb atoms form islands by STM and the πbands of the BLG shift toward the Fermi level by ARPES. This hole-doping-like energy shift is enhanced as the amount of Pb is increased, and we were able to tune the Dirac gap to the Fermi level by 4 ML deposition. Considering the band dispersion, we suggest that the hole-doping-like effect is related to the difference between the work functions of Pb islands and BLG/SiC; the work function of BLG/SiC is lower than that of Pb. Our results propose an easy way of band tuning for graphene with an appropriate selection of both the substrate and deposited material.

UR - http://www.scopus.com/inward/record.url?scp=85089950456&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85089950456&partnerID=8YFLogxK

U2 - 10.1063/5.0013797

DO - 10.1063/5.0013797

M3 - Article

AN - SCOPUS:85089950456

SN - 2158-3226

VL - 10

JO - AIP Advances

JF - AIP Advances

IS - 8

M1 - 085314

ER -

Controlling of the Dirac band states of Pb-deposited graphene by using work function difference

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this