Correction: Photoluminescence Mechanism in Heavily Si-Doped GaAsN (Crystal Research and Technology, (2021), 56, 3, (2000143), 10.1002/crat.202000143)

In the originally published article, the following values were presented incorrectly: 1) The values of the Si impurity concentration ([Si]) and the electron concentration (n) are slightly erroneous for the heavily Si-doped GaAsN, which are described as 6 × 10¹⁹ cm^–3 and 9 × 10¹⁸ cm^–3, respectively. The correct values of them are 2 × 10¹⁹ cm^–3 and 6 × 10¹⁸ cm^–3, respectively. Figure 1 and 2 with the correct values are presented below. 2) The value of n is applied for the evaluation of electron effective mass (m_e^*) in the paper. The correct values of the decreased energy of the bandgap narrowing (ΔE_BGN) and the increased energy of the Burstein-Moss effect (E_fn) are 120 meV and 140 meV instead of 140 meV and 160 meV, respectively. Consequently, for the heavily Si-doped GaAsN, the correct value of m_e^* is 0.11m₀ instead of 0.098m₀, where m₀ is the electron mass. Figure 2 with the correct value is presented below. 1 Figure (Figure presented.) PL spectra of heavily Si-doped GaAsN with [Si] of 2 × 10¹⁹ cm⁻³ and [N] of 0.6% as a function of temperature. Black arrows indicate PL peak energy on each PL spectrum. 2 Figure (Figure presented.) Temperature dependence of PL peak energy for heavily Si-doped GaAsN with [Si] of 2 × 10¹⁹ cm⁻³ and [N] of 0.6% and moderately Si-doped GaAsN with [Si] of 1 × 10¹⁸ cm⁻³ and [N] of 0.7%. The authors state that these errors do not change the scientific conclusions of the paper in any way and apologize for any confusion this may have caused.