Correlation between composition, microstructure, and ferroelectric properties of SrBi2Ta2O9 thin films

Sachiko Ono*, Akira Sakakibara, Tomonori Seki, Tetsuya Osaka, Ichiro Koiwa, Juro Mita, Toshiyuki Iwabuchi, Katsuhiko Asami

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


SrBi2Ta2O9 thin films prepared by a solution-deposition process were formed at various annealing temperatures. P-E hysteresis loops of the fims exhibited well-defined shapes, and the leakage current decreased with increasing annealing temperature except for one annealed at 750°C. The considerable amount of metallic Bi on the film surface diffused from the inner part was evaluated by a quantitative x-ray photoelectron spectroscopic analysis. A discontinuity in morphology such as cavities detected by transmission electron microscopic observation at grain boundaries between large single-crystal grains and microcrystallite regions, which was pronounced in the film annealed at 750°C, is suggested as inducing an increase in leakage current by the condensation of metallic Bi at the cavities.

Original languageEnglish
Pages (from-to)L185-L187
JournalJournal of the Electrochemical Society
Issue number7
Publication statusPublished - 1997 Jul

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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