Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO

T. Koida; S. F. Chichibu; A. Uedono; A. Tsukazaki; M. Kawasakib; T. Sota; Y. Segawa; H. Koinuma

doi:10.1063/1.1540220

Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO

T. Koida, S. F. Chichibu^*, A. Uedono, A. Tsukazaki, M. Kawasakib, T. Sota, Y. Segawa, H. Koinuma

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

231 Citations (Scopus)

Abstract

The correlation between the defect density and photoluminescence lifetime in bulk and epitaxial ZnO was studied. With the increase of the nonradiative PL lifetime (τ_nr), free excitonic PL intensity increased naturally. It was found that the single point defects did not solely governed the nonradiative recombination, but certain defect species introduced by the presence of V_Zn such as vacancy complexes.

Original language	English
Pages (from-to)	532-534
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	4
DOIs	https://doi.org/10.1063/1.1540220
Publication status	Published - 2003 Jan 27

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1540220

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@article{8ba3a0957c024af0b4c9618354984a6d,

title = "Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO",

abstract = "The correlation between the defect density and photoluminescence lifetime in bulk and epitaxial ZnO was studied. With the increase of the nonradiative PL lifetime (τnr), free excitonic PL intensity increased naturally. It was found that the single point defects did not solely governed the nonradiative recombination, but certain defect species introduced by the presence of VZn such as vacancy complexes.",

author = "T. Koida and Chichibu, {S. F.} and A. Uedono and A. Tsukazaki and M. Kawasakib and T. Sota and Y. Segawa and H. Koinuma",

year = "2003",

month = jan,

day = "27",

doi = "10.1063/1.1540220",

language = "English",

volume = "82",

pages = "532--534",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "4",

}

TY - JOUR

T1 - Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO

AU - Koida, T.

AU - Chichibu, S. F.

AU - Uedono, A.

AU - Tsukazaki, A.

AU - Kawasakib, M.

AU - Sota, T.

AU - Segawa, Y.

AU - Koinuma, H.

PY - 2003/1/27

Y1 - 2003/1/27

N2 - The correlation between the defect density and photoluminescence lifetime in bulk and epitaxial ZnO was studied. With the increase of the nonradiative PL lifetime (τnr), free excitonic PL intensity increased naturally. It was found that the single point defects did not solely governed the nonradiative recombination, but certain defect species introduced by the presence of VZn such as vacancy complexes.

AB - The correlation between the defect density and photoluminescence lifetime in bulk and epitaxial ZnO was studied. With the increase of the nonradiative PL lifetime (τnr), free excitonic PL intensity increased naturally. It was found that the single point defects did not solely governed the nonradiative recombination, but certain defect species introduced by the presence of VZn such as vacancy complexes.

UR - http://www.scopus.com/inward/record.url?scp=0037467972&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037467972&partnerID=8YFLogxK

U2 - 10.1063/1.1540220

DO - 10.1063/1.1540220

M3 - Article

AN - SCOPUS:0037467972

SN - 0003-6951

VL - 82

SP - 532

EP - 534

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO

Abstract

ASJC Scopus subject areas

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