Coupled Monte Carlo simulation of transient electron-phonon transport in nanoscale devices

Yoshinari Kamakura; Nubuya Mori; Kenji Taniguchi; Tomofumi Zushi; Takanobu Watanabe

doi:10.1109/SISPAD.2010.5604561

Coupled Monte Carlo simulation of transient electron-phonon transport in nanoscale devices

Yoshinari Kamakura^*, Nubuya Mori, Kenji Taniguchi, Tomofumi Zushi, Takanobu Watanabe

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

Using a coupled Monte Carlo method for solving both electron and phonon Boltzmann transport equations, the transient electrothermal behaviors of nanoscale Si n-i-n device are simulated. The nonequilibrium optical phonon distribution is characterized by a temperature different from that of the acoustic phonons, and these two temperatures show different characteristics not only in the steady state, but also in transient conditions. It has been also suggested that the simulated transient response of the phonon temperatures can be practically described by the equivalent thermal circuit model, which is useful for, e.g., projecting the NBTI lifetime during the realistic circuit operations.

Original language	English
Title of host publication	15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010
Pages	89-92
Number of pages	4
DOIs	https://doi.org/10.1109/SISPAD.2010.5604561
Publication status	Published - 2010 Dec 6
Event	15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010 - Bologna, Italy Duration: 2010 Sept 6 → 2010 Sept 8

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference	15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010
Country/Territory	Italy
City	Bologna
Period	10/9/6 → 10/9/8

ASJC Scopus subject areas

Electrical and Electronic Engineering
Computer Science Applications
Modelling and Simulation

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10.1109/SISPAD.2010.5604561

Cite this

Kamakura, Y., Mori, N., Taniguchi, K., Zushi, T., & Watanabe, T. (2010). Coupled Monte Carlo simulation of transient electron-phonon transport in nanoscale devices. In 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010 (pp. 89-92). Article 5604561 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2010.5604561

Coupled Monte Carlo simulation of transient electron-phonon transport in nanoscale devices. / Kamakura, Yoshinari; Mori, Nubuya; Taniguchi, Kenji et al.
15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010. 2010. p. 89-92 5604561 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kamakura, Y, Mori, N, Taniguchi, K, Zushi, T & Watanabe, T 2010, Coupled Monte Carlo simulation of transient electron-phonon transport in nanoscale devices. in 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010., 5604561, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, pp. 89-92, 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010, Bologna, Italy, 10/9/6. https://doi.org/10.1109/SISPAD.2010.5604561

Kamakura Y, Mori N, Taniguchi K, Zushi T, Watanabe T. Coupled Monte Carlo simulation of transient electron-phonon transport in nanoscale devices. In 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010. 2010. p. 89-92. 5604561. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: 10.1109/SISPAD.2010.5604561

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abstract = "Using a coupled Monte Carlo method for solving both electron and phonon Boltzmann transport equations, the transient electrothermal behaviors of nanoscale Si n-i-n device are simulated. The nonequilibrium optical phonon distribution is characterized by a temperature different from that of the acoustic phonons, and these two temperatures show different characteristics not only in the steady state, but also in transient conditions. It has been also suggested that the simulated transient response of the phonon temperatures can be practically described by the equivalent thermal circuit model, which is useful for, e.g., projecting the NBTI lifetime during the realistic circuit operations.",

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AB - Using a coupled Monte Carlo method for solving both electron and phonon Boltzmann transport equations, the transient electrothermal behaviors of nanoscale Si n-i-n device are simulated. The nonequilibrium optical phonon distribution is characterized by a temperature different from that of the acoustic phonons, and these two temperatures show different characteristics not only in the steady state, but also in transient conditions. It has been also suggested that the simulated transient response of the phonon temperatures can be practically described by the equivalent thermal circuit model, which is useful for, e.g., projecting the NBTI lifetime during the realistic circuit operations.

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Coupled Monte Carlo simulation of transient electron-phonon transport in nanoscale devices

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