Coupling of spontaneous emission from GaN–AlN quantum dots into silver surface plasmons

Arup Neogi; Hadis Morkoç; Takamasa Kuroda; Atsushi Tackeuchi

doi:10.1364/OL.30.000093

Coupling of spontaneous emission from GaN–AlN quantum dots into silver surface plasmons

Arup Neogi, Hadis Morkoç, Takamasa Kuroda, Atsushi Tackeuchi

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

We have demonstrated the decay of spontaneous emission (SE) from AlN–GaN quantum dots (QDs) into silver surface plasmon (SP) modes in the ultraviolet at approximately 375–380 nm. Using time-resolved photoluminescence (PL), we show that the electron–hole recombination rate in AlN–GaN QDs is enhanced when SE is resonantly coupled to a metal SP mode, corresponding to the dip in the continuous-wave PL spectrum. Exciton recombination by means of silver SP modes is as much as 3–7 times faster than in normal QD SE and depends strongly on emission wavelength and thickness of the silver.

Original language	English
Pages (from-to)	93-95
Number of pages	3
Journal	Optics Letters
Volume	30
Issue number	1
DOIs	https://doi.org/10.1364/OL.30.000093
Publication status	Published - 2005 Jan 1

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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abstract = "We have demonstrated the decay of spontaneous emission (SE) from AlN–GaN quantum dots (QDs) into silver surface plasmon (SP) modes in the ultraviolet at approximately 375–380 nm. Using time-resolved photoluminescence (PL), we show that the electron–hole recombination rate in AlN–GaN QDs is enhanced when SE is resonantly coupled to a metal SP mode, corresponding to the dip in the continuous-wave PL spectrum. Exciton recombination by means of silver SP modes is as much as 3–7 times faster than in normal QD SE and depends strongly on emission wavelength and thickness of the silver.",

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AU - Neogi, Arup

AU - Morkoç, Hadis

AU - Kuroda, Takamasa

AU - Tackeuchi, Atsushi

PY - 2005/1/1

Y1 - 2005/1/1

N2 - We have demonstrated the decay of spontaneous emission (SE) from AlN–GaN quantum dots (QDs) into silver surface plasmon (SP) modes in the ultraviolet at approximately 375–380 nm. Using time-resolved photoluminescence (PL), we show that the electron–hole recombination rate in AlN–GaN QDs is enhanced when SE is resonantly coupled to a metal SP mode, corresponding to the dip in the continuous-wave PL spectrum. Exciton recombination by means of silver SP modes is as much as 3–7 times faster than in normal QD SE and depends strongly on emission wavelength and thickness of the silver.

AB - We have demonstrated the decay of spontaneous emission (SE) from AlN–GaN quantum dots (QDs) into silver surface plasmon (SP) modes in the ultraviolet at approximately 375–380 nm. Using time-resolved photoluminescence (PL), we show that the electron–hole recombination rate in AlN–GaN QDs is enhanced when SE is resonantly coupled to a metal SP mode, corresponding to the dip in the continuous-wave PL spectrum. Exciton recombination by means of silver SP modes is as much as 3–7 times faster than in normal QD SE and depends strongly on emission wavelength and thickness of the silver.

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Coupling of spontaneous emission from GaN–AlN quantum dots into silver surface plasmons

Abstract

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