Critical effect of nanometer-size surface roughness of a porous Si seed layer on the defect density of epitaxial Si films for solar cells by rapid vapor deposition

Kei Hasegawa; Chiaki Takazawa; Makoto Fujita; Suguru Noda; Manabu Ihara

doi:10.1039/c7ce02162c

Critical effect of nanometer-size surface roughness of a porous Si seed layer on the defect density of epitaxial Si films for solar cells by rapid vapor deposition

Kei Hasegawa^*, Chiaki Takazawa, Makoto Fujita, Suguru Noda, Manabu Ihara

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Monocrystalline, low-defect density Si thin films were successfully fabricated via epitaxy with 1 minute rapid vapor deposition on a porous seed layer. Zone heating recrystallization reduced the surface roughness of the seed layer to sub-nanometer size. The critical effect of roughness on the defect density of epitaxial films was confirmed.

Original language	English
Pages (from-to)	1774-1778
Number of pages	5
Journal	CrystEngComm
Volume	20
Issue number	13
DOIs	https://doi.org/10.1039/c7ce02162c
Publication status	Published - 2018

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

Access to Document

10.1039/c7ce02162c

Cite this

@article{6e24c68717d04b92a886fd174ca74ceb,

title = "Critical effect of nanometer-size surface roughness of a porous Si seed layer on the defect density of epitaxial Si films for solar cells by rapid vapor deposition",

abstract = "Monocrystalline, low-defect density Si thin films were successfully fabricated via epitaxy with 1 minute rapid vapor deposition on a porous seed layer. Zone heating recrystallization reduced the surface roughness of the seed layer to sub-nanometer size. The critical effect of roughness on the defect density of epitaxial films was confirmed.",

author = "Kei Hasegawa and Chiaki Takazawa and Makoto Fujita and Suguru Noda and Manabu Ihara",

year = "2018",

doi = "10.1039/c7ce02162c",

language = "English",

volume = "20",

pages = "1774--1778",

journal = "CrystEngComm",

issn = "1466-8033",

publisher = "Royal Society of Chemistry",

number = "13",

}

TY - JOUR

T1 - Critical effect of nanometer-size surface roughness of a porous Si seed layer on the defect density of epitaxial Si films for solar cells by rapid vapor deposition

AU - Hasegawa, Kei

AU - Takazawa, Chiaki

AU - Fujita, Makoto

AU - Noda, Suguru

AU - Ihara, Manabu

PY - 2018

Y1 - 2018

N2 - Monocrystalline, low-defect density Si thin films were successfully fabricated via epitaxy with 1 minute rapid vapor deposition on a porous seed layer. Zone heating recrystallization reduced the surface roughness of the seed layer to sub-nanometer size. The critical effect of roughness on the defect density of epitaxial films was confirmed.

AB - Monocrystalline, low-defect density Si thin films were successfully fabricated via epitaxy with 1 minute rapid vapor deposition on a porous seed layer. Zone heating recrystallization reduced the surface roughness of the seed layer to sub-nanometer size. The critical effect of roughness on the defect density of epitaxial films was confirmed.

UR - http://www.scopus.com/inward/record.url?scp=85044501230&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85044501230&partnerID=8YFLogxK

U2 - 10.1039/c7ce02162c

DO - 10.1039/c7ce02162c

M3 - Article

AN - SCOPUS:85044501230

SN - 1466-8033

VL - 20

SP - 1774

EP - 1778

JO - CrystEngComm

JF - CrystEngComm

IS - 13

ER -

Critical effect of nanometer-size surface roughness of a porous Si seed layer on the defect density of epitaxial Si films for solar cells by rapid vapor deposition

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this