Critical layer thickness study in In0.75Ga0.25As/In0.5Al0.5As pseudomorphic resonant tunneling diode structure grown on GaAs substrates

Shin Ichiro Gozu; Tomohiro Kita; Tomoyuki Kikutani; Syoji Yamada

doi:10.1016/S0022-0248(01)00656-X

Critical layer thickness study in In_0.75Ga_0.25As/In_0.5Al_0.5As pseudomorphic resonant tunneling diode structure grown on GaAs substrates

Shin Ichiro Gozu, Tomohiro Kita, Tomoyuki Kikutani, Syoji Yamada

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We have studied critical layer thickness (CLT) in an In_0.75Ga_0.25As resonant tunneling diode structure grown on a GaAs substrate via an InAlAs step-graded buffer (SGB) with two types of inverse step(IS)-SGB. We have observed red or blue shift in photoluminescence spectra and CLT change depending on SGB condition. This change reflects from the difference of residual strain InAlAs SGBs adopted here.

Original language	English
Pages (from-to)	161-166
Number of pages	6
Journal	Journal of Crystal Growth
Volume	227
Issue number	228
DOIs	https://doi.org/10.1016/S0022-0248(01)00656-X
Publication status	Published - 2001 Jul
Externally published	Yes

Keywords

A1. Low dimensional structure
A3. Molecular beam epitaxy
B1. Arsenates
B2. Semiconducting III-V materials
B3. Heterojunction semiconductor devices

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/S0022-0248(01)00656-X

Cite this

@article{04709192bc154e7ea2df917794db61fe,

title = "Critical layer thickness study in In0.75Ga0.25As/In0.5Al0.5As pseudomorphic resonant tunneling diode structure grown on GaAs substrates",

abstract = "We have studied critical layer thickness (CLT) in an In0.75Ga0.25As resonant tunneling diode structure grown on a GaAs substrate via an InAlAs step-graded buffer (SGB) with two types of inverse step(IS)-SGB. We have observed red or blue shift in photoluminescence spectra and CLT change depending on SGB condition. This change reflects from the difference of residual strain InAlAs SGBs adopted here.",

keywords = "A1. Low dimensional structure, A3. Molecular beam epitaxy, B1. Arsenates, B2. Semiconducting III-V materials, B3. Heterojunction semiconductor devices",

author = "Gozu, {Shin Ichiro} and Tomohiro Kita and Tomoyuki Kikutani and Syoji Yamada",

year = "2001",

month = jul,

doi = "10.1016/S0022-0248(01)00656-X",

language = "English",

volume = "227",

pages = "161--166",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "228",

}

TY - JOUR

T1 - Critical layer thickness study in In0.75Ga0.25As/In0.5Al0.5As pseudomorphic resonant tunneling diode structure grown on GaAs substrates

AU - Gozu, Shin Ichiro

AU - Kita, Tomohiro

AU - Kikutani, Tomoyuki

AU - Yamada, Syoji

PY - 2001/7

Y1 - 2001/7

N2 - We have studied critical layer thickness (CLT) in an In0.75Ga0.25As resonant tunneling diode structure grown on a GaAs substrate via an InAlAs step-graded buffer (SGB) with two types of inverse step(IS)-SGB. We have observed red or blue shift in photoluminescence spectra and CLT change depending on SGB condition. This change reflects from the difference of residual strain InAlAs SGBs adopted here.

AB - We have studied critical layer thickness (CLT) in an In0.75Ga0.25As resonant tunneling diode structure grown on a GaAs substrate via an InAlAs step-graded buffer (SGB) with two types of inverse step(IS)-SGB. We have observed red or blue shift in photoluminescence spectra and CLT change depending on SGB condition. This change reflects from the difference of residual strain InAlAs SGBs adopted here.

KW - A1. Low dimensional structure

KW - A3. Molecular beam epitaxy

KW - B1. Arsenates

KW - B2. Semiconducting III-V materials

KW - B3. Heterojunction semiconductor devices

UR - http://www.scopus.com/inward/record.url?scp=0035395179&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035395179&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(01)00656-X

DO - 10.1016/S0022-0248(01)00656-X

M3 - Article

AN - SCOPUS:0035395179

SN - 0022-0248

VL - 227

SP - 161

EP - 166

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 228

ER -