Cross-sectional scanning tunneling microscopy characterization of cubic GaN epilayers grown on (001) GaAs

T. Kazama*, F. Yasunaga, Y. Taniyasu, A. Jia, Y. Kato, M. Kobayashi, A. Yoshikawa, K. Takahashi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


Atomic scale characterization of cleaved surfaces of cubic GaN (c-GaN) epilayers was established in real space. Using cross-sectional scanning tunneling microscopy (XSTM), c-GaN epilayers grown on GaAs (001) by low pressure MOVPE were investigated. The analysis of STM observations revealed that the atomic arrangement of the c-GaN (11̄0) surface depended on the crystal quality of the c-GaN epilayer. For high quality c-GaN regions, the STM image confirmed that the c-GaN (11̄0) surface was a 1 × 1 reconstruction in analogy to GaAs. On the other hand, for poor quality c-GaN regions, a structure different from the 1 × 1 reconstruction was observed, which was the disordered structure composed of atomic rows along the growth direction. In addition, stacking faults parallel to the c-GaN (111) plane, which gave rise to hexagonal GaN inclusions in the c-GaN epilayer, were characterized in real space.

Original languageEnglish
Pages (from-to)345-350
Number of pages6
JournalPhysica Status Solidi (A) Applied Research
Issue number1
Publication statusPublished - 2000 Jul
Externally publishedYes
Event3rd International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen/Berlin, Ger
Duration: 2000 Mar 62000 Mar 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


Dive into the research topics of 'Cross-sectional scanning tunneling microscopy characterization of cubic GaN epilayers grown on (001) GaAs'. Together they form a unique fingerprint.

Cite this