Cross-sectional TEM study and film thickness dependence of Tc in heavily boron-doped superconducting diamond

S. Kitagoh; R. Okada; A. Kawano; M. Watanabe; Y. Takano; T. Yamaguchi; T. Chikyow; H. Kawarada

doi:10.1016/j.physc.2009.12.064

Cross-sectional TEM study and film thickness dependence of Tc in heavily boron-doped superconducting diamond

S. Kitagoh, R. Okada, A. Kawano, M. Watanabe, Y. Takano, T. Yamaguchi, T. Chikyow, H. Kawarada^*

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The film thickness dependence of Tc in heavily B-doped diamond (1 1 1) and (0 0 1) films was investigated and cross-sectional transmission electron microscope observation was employed to investigate the crystalline structure of heavily B-doped diamond. (1 1 1) films with 5 nm or more and (0 0 1) films with 40 nm or more show superconducting transition. Few dislocations are observed in 500 nm from the interface between the substrate and B-doped homoepitaxial layer in (1 1 1) film and defective structure observed in (0 0 1) film.

Original language	English
Pages (from-to)	S610-S612
Journal	Physica C: Superconductivity and its applications
Volume	470
Issue number	SUPPL.1
DOIs	https://doi.org/10.1016/j.physc.2009.12.064
Publication status	Published - 2010 Dec

Keywords

Boron-doped
Crystalline structure
Diamond
Superconductivity
Thin film

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

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10.1016/j.physc.2009.12.064

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title = "Cross-sectional TEM study and film thickness dependence of Tc in heavily boron-doped superconducting diamond",

abstract = "The film thickness dependence of Tc in heavily B-doped diamond (1 1 1) and (0 0 1) films was investigated and cross-sectional transmission electron microscope observation was employed to investigate the crystalline structure of heavily B-doped diamond. (1 1 1) films with 5 nm or more and (0 0 1) films with 40 nm or more show superconducting transition. Few dislocations are observed in 500 nm from the interface between the substrate and B-doped homoepitaxial layer in (1 1 1) film and defective structure observed in (0 0 1) film.",

keywords = "Boron-doped, Crystalline structure, Diamond, Superconductivity, Thin film",

author = "S. Kitagoh and R. Okada and A. Kawano and M. Watanabe and Y. Takano and T. Yamaguchi and T. Chikyow and H. Kawarada",

note = "Funding Information: A part of this work was supported by Grant in aid for scientific research S (A07102000) of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan. This work was also supported in part by “Nanotechnology Net work Project” and “World Premier International Research Center (WPI) Initiative on Material Nanoarchitectonics”, MEXT, Japan.",

year = "2010",

month = dec,

doi = "10.1016/j.physc.2009.12.064",

language = "English",

volume = "470",

pages = "S610--S612",

journal = "Physica C: Superconductivity and its applications",

issn = "0921-4534",

publisher = "Elsevier",

number = "SUPPL.1",

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TY - JOUR

T1 - Cross-sectional TEM study and film thickness dependence of Tc in heavily boron-doped superconducting diamond

AU - Kitagoh, S.

AU - Okada, R.

AU - Kawano, A.

AU - Watanabe, M.

AU - Takano, Y.

AU - Yamaguchi, T.

AU - Chikyow, T.

AU - Kawarada, H.

N1 - Funding Information: A part of this work was supported by Grant in aid for scientific research S (A07102000) of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan. This work was also supported in part by “Nanotechnology Net work Project” and “World Premier International Research Center (WPI) Initiative on Material Nanoarchitectonics”, MEXT, Japan.

PY - 2010/12

Y1 - 2010/12

N2 - The film thickness dependence of Tc in heavily B-doped diamond (1 1 1) and (0 0 1) films was investigated and cross-sectional transmission electron microscope observation was employed to investigate the crystalline structure of heavily B-doped diamond. (1 1 1) films with 5 nm or more and (0 0 1) films with 40 nm or more show superconducting transition. Few dislocations are observed in 500 nm from the interface between the substrate and B-doped homoepitaxial layer in (1 1 1) film and defective structure observed in (0 0 1) film.

AB - The film thickness dependence of Tc in heavily B-doped diamond (1 1 1) and (0 0 1) films was investigated and cross-sectional transmission electron microscope observation was employed to investigate the crystalline structure of heavily B-doped diamond. (1 1 1) films with 5 nm or more and (0 0 1) films with 40 nm or more show superconducting transition. Few dislocations are observed in 500 nm from the interface between the substrate and B-doped homoepitaxial layer in (1 1 1) film and defective structure observed in (0 0 1) film.

KW - Boron-doped

KW - Crystalline structure

KW - Diamond

KW - Superconductivity

KW - Thin film

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U2 - 10.1016/j.physc.2009.12.064

DO - 10.1016/j.physc.2009.12.064

M3 - Article

AN - SCOPUS:78649694561

SN - 0921-4534

VL - 470

SP - S610-S612

JO - Physica C: Superconductivity and its applications

JF - Physica C: Superconductivity and its applications

IS - SUPPL.1

ER -

Cross-sectional TEM study and film thickness dependence of Tc in heavily boron-doped superconducting diamond

Abstract

Keywords

ASJC Scopus subject areas

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