Crystalline structures of YAlO3 single crystal at high temperatures

Takahiro Inoue, Takaaki Morimoto, Shoji Kaneko, Yosuke Horii, Yoshimichi Ohki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In order to clarify the influence of high temperature annealing on a next-generation gate insulating material YAlO3, single crystal YAlO3 samples were annealed at various temperatures from 900 to 1300°C in air for about 12 hours. The crystalline structure was examined by X-ray diffractometry, while the surface profile was examined by atomic force microscopy and a surface profilometer. Furthermore, infrared absorption spectroscopy and optical microscopy were used. As a result, the following serial changes in structure were estimated. The perovskite structure of crystalline YAlO3 starts to collapse and Y3Al5O 12 (YAG) is formed by the annealing at 1160 °C. Then, it segregates to Al2O3 andYAlO3 after the annealing at 1300 °C.

Original languageEnglish
Title of host publicationProceedings of 2014 International Symposium on Electrical Insulating Materials, ISEIM 2014
PublisherInstitute of Electrical Engineers of Japan
Pages208-211
Number of pages4
ISBN (Print)9784886860866
DOIs
Publication statusPublished - 2014 Jan 1
Event2014 International Symposium on Electrical Insulating Materials, ISEIM 2014 - Niigata, Japan
Duration: 2014 Jun 12014 Jun 5

Publication series

NameProceedings of the International Symposium on Electrical Insulating Materials

Other

Other2014 International Symposium on Electrical Insulating Materials, ISEIM 2014
Country/TerritoryJapan
CityNiigata
Period14/6/114/6/5

Keywords

  • Structural changes
  • Thermal annealing
  • X-ray diffractometry

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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