TY - JOUR
T1 - Crystalline/amorphous Raman markers of hole-transport material NPD in organic light-emitting diodes
AU - Sugiyama, Takuro
AU - Furukawa, Yukio
AU - Fujimura, Hidetoshi
N1 - Funding Information:
This work was supported in part by the Grant-in-Aid for Scientific Research (A) (No. 16205004) and the 21COE ‘Practical Nano-Chemistry’ from the Ministry of Education, Culture, Sports, Science and Technology.
PY - 2005/4/12
Y1 - 2005/4/12
N2 - Raman marker bands characteristic of solid-state structure have been found for N,N′-di-1-naphthaleyl-N,N′-diphenyl-1,1′-biphenyl-4, 4′-diamine (NPD), which is used as a hole-transport material in organic light-emitting diodes. The widths of the marker bands observed for an amorphous state at 1607, 1290, and 1192 cm-1 are broader than those for the crystalline state observed at 1609, 1288, and 1198 cm-1. These Raman bands are found to be useful for detecting the crystallization, which may cause degradation of organic light emitting diodes, of amorphous NPD films.
AB - Raman marker bands characteristic of solid-state structure have been found for N,N′-di-1-naphthaleyl-N,N′-diphenyl-1,1′-biphenyl-4, 4′-diamine (NPD), which is used as a hole-transport material in organic light-emitting diodes. The widths of the marker bands observed for an amorphous state at 1607, 1290, and 1192 cm-1 are broader than those for the crystalline state observed at 1609, 1288, and 1198 cm-1. These Raman bands are found to be useful for detecting the crystallization, which may cause degradation of organic light emitting diodes, of amorphous NPD films.
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U2 - 10.1016/j.cplett.2005.02.059
DO - 10.1016/j.cplett.2005.02.059
M3 - Article
AN - SCOPUS:15944372554
SN - 0009-2614
VL - 405
SP - 330
EP - 333
JO - Chemical Physics Letters
JF - Chemical Physics Letters
IS - 4-6
ER -