Crystallization behavior during transparent In2O3-ZnO film growth

Junjun Jia, Shin ichi Nakamura, Yuzo Shigesato*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Structural evolution of transparent conductive In2O3-ZnO (IZO) films with increasing substrate temperature during sputtering was studied using transmission electron microscopy (TEM) and spectroscopic ellipsometry. Increasing the substrate temperature can induce film crystallization in the initial growth stage, and enhance the crystallization of IZO films. Extensive simulations using ellipsometry data demonstrated a decrease in the crystallization rate for IZO films deposited between 200 and 300 °C, which is attributed to the influence of the interference between nearby growing grains. TEM observations also reveal that the growth competition between different crystallites leads to an increase in the lateral grain size with increasing substrate temperature.

Original languageEnglish
Pages (from-to)2291-2295
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number9
Publication statusPublished - 2016 Sept 1
Externally publishedYes


  • crystallization
  • InO
  • spectroscopic ellipsometry
  • thin films
  • transmission electron microscopy
  • ZnO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


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