Crystallization of Diamond Using Energetic Ion Beam up to 400 keV

Masahiko Ogura; Masataka Hasegawa; Yasunori Tanaka; Naoto Kobayashi

Crystallization of Diamond Using Energetic Ion Beam up to 400 keV

Masahiko Ogura^*, Masataka Hasegawa, Yasunori Tanaka, Naoto Kobayashi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	137-140
Number of pages	4
Journal	New Diamond and Frontier Carbon Technology
Volume	9
Issue number	2
Publication status	Published - 1999
Externally published	Yes

Keywords

Annealing
Diamond
Implantation
Semiconductor

ASJC Scopus subject areas

Materials Science(all)
Surfaces, Coatings and Films
Surfaces and Interfaces

Cite this

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title = "Crystallization of Diamond Using Energetic Ion Beam up to 400 keV",

keywords = "Annealing, Diamond, Implantation, Semiconductor",

author = "Masahiko Ogura and Masataka Hasegawa and Yasunori Tanaka and Naoto Kobayashi",

year = "1999",

language = "English",

volume = "9",

pages = "137--140",

journal = "New Diamond and Frontier Carbon Technology",

issn = "1344-9931",

publisher = "M Y U Scientific Publishing Division",

number = "2",

}

TY - JOUR

T1 - Crystallization of Diamond Using Energetic Ion Beam up to 400 keV

AU - Ogura, Masahiko

AU - Hasegawa, Masataka

AU - Tanaka, Yasunori

AU - Kobayashi, Naoto

PY - 1999

Y1 - 1999

KW - Annealing

KW - Diamond

KW - Implantation

KW - Semiconductor

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M3 - Article

AN - SCOPUS:0346390338

SN - 1344-9931

VL - 9

SP - 137

EP - 140

JO - New Diamond and Frontier Carbon Technology

JF - New Diamond and Frontier Carbon Technology

IS - 2

ER -

Crystallization of Diamond Using Energetic Ion Beam up to 400 keV

Keywords

ASJC Scopus subject areas

Other files and links

Cite this