Crystallization of Sr_0.7Bi_2.3Ta₂O_9+α thin films by chemical liquid deposition

By chemical liquid deposition in which an alkoxide with a carbon number of 4 or smaller was used as raw material, a Sr_0.7Bi_2.3Ta₂O_9+α (SBTO) thin film was fabricated for use as a ferroelectric memory device for the purpose of decreasing the temperature of crystallization and improving surface morphology. The crystallization process was also examined. Crystallization began when the film was heat treated in oxygen at 650°C. When it was heat treated at higher than 700°C, it showed ferroelectric properties, and the squareness (remanent polarization/saturation polarization) of its hysteresis loop was improved at 800°C. A film heat treated at temperature 650°C was a cluster of fine particles, and a film heat treated at 800°C was a cluster of large particles. A film heat treated at 700°C was a mixture of fine particles and large particles. Therefore, it is concluded that the alkoxide with a carbon number of 4 or smaller as raw material enable the lowering of the heat-treatment temperature and improvement of the surface morphology of SBTO thin films.