TY - JOUR
T1 - C–Si bonded two-dimensional hole gas diamond MOSFET with normally-off operation and wide temperature range stability
AU - Bi, Te
AU - Chang, Yuhao
AU - Fei, Wenxi
AU - Iwataki, Masayuki
AU - Morishita, Aoi
AU - Fu, Yu
AU - Niikura, Naoya
AU - Kawarada, Hiroshi
N1 - Funding Information:
This work was supported by the Research Organization for Nano & Life Innovation, Waseda University, 513 Waseda Tsurumaki-cho, Shinjuku-ku, Tokyo 162-0041, Japan .
Publisher Copyright:
© 2021 Elsevier Ltd
PY - 2021/4/30
Y1 - 2021/4/30
N2 - A C–Si bonded SiO2/diamond interface is formed under a SiO2 mask during the selective diamond growth at a high temperature in a H2 atmosphere including methane (5%). A few monolayers with C–Si bonding at the SiO2/diamond surface are confirmed through X-ray photoelectron spectroscopy at the C1s and Si2p core levels from 290 eV to 271 eV and 107 eV–95 eV, respectively. In addition, secondary ion mass spectroscopy results suggest that the C–Si bonds, and not C–H bonds, are majority at the interface and are mainly responsible for the field effect transistor (FET) operation. Two-dimensional hole gas C–Si diamond metal–oxide–semiconductor FET (MOSFETs) are fabricated using the C–Si diamond sub-surface as a p-channel. The MOSFETs in which the actual length from the source to the drain (LSD) is 12 μm–6 μm show appreciable field-effect mobility (e.g. 140 cm2V−1s−1 at LSD = 12 μm and 300 K) and normally-off operation. The wide temperature characteristics of the C–Si MOSFETs are confirmed and the device shows high stability, and a high on/off ratio of 106 is maintained at 673 K. The C–Si bonding at the SiO2/diamond interface provide a lower interface state density which makes the MOSFET show high drain current density and field-effect mobility with normally-off operation.
AB - A C–Si bonded SiO2/diamond interface is formed under a SiO2 mask during the selective diamond growth at a high temperature in a H2 atmosphere including methane (5%). A few monolayers with C–Si bonding at the SiO2/diamond surface are confirmed through X-ray photoelectron spectroscopy at the C1s and Si2p core levels from 290 eV to 271 eV and 107 eV–95 eV, respectively. In addition, secondary ion mass spectroscopy results suggest that the C–Si bonds, and not C–H bonds, are majority at the interface and are mainly responsible for the field effect transistor (FET) operation. Two-dimensional hole gas C–Si diamond metal–oxide–semiconductor FET (MOSFETs) are fabricated using the C–Si diamond sub-surface as a p-channel. The MOSFETs in which the actual length from the source to the drain (LSD) is 12 μm–6 μm show appreciable field-effect mobility (e.g. 140 cm2V−1s−1 at LSD = 12 μm and 300 K) and normally-off operation. The wide temperature characteristics of the C–Si MOSFETs are confirmed and the device shows high stability, and a high on/off ratio of 106 is maintained at 673 K. The C–Si bonding at the SiO2/diamond interface provide a lower interface state density which makes the MOSFET show high drain current density and field-effect mobility with normally-off operation.
KW - Carbon electronics
KW - C–Si Diamond surface
KW - Diamond
KW - Metal–oxide–semiconductor field-effect transistor (MOSFET)
KW - Two-dimensional hole gas (2DHG)
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U2 - 10.1016/j.carbon.2021.01.012
DO - 10.1016/j.carbon.2021.01.012
M3 - Article
AN - SCOPUS:85099791909
SN - 0008-6223
VL - 175
SP - 525
EP - 533
JO - Carbon
JF - Carbon
ER -