Cu-ion diffusivity in SiO2-Ta2O5 solid electrolyte and its impact on the yield of resistance switching after BEOL processes

N. Banno; T. Sakamoto; H. Hada; N. Kasai; N. Iguchi; H. Imai; S. Fujieda; T. Ichihashi; T. Hasegawa; M. Aono

doi:10.1109/IRPS.2009.5173285

Cu-ion diffusivity in SiO₂-Ta₂O₅ solid electrolyte and its impact on the yield of resistance switching after BEOL processes

N. Banno^*, T. Sakamoto, H. Hada, N. Kasai, N. Iguchi, H. Imai, S. Fujieda, T. Ichihashi, T. Hasegawa, M. Aono

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Citations (Scopus)

Abstract

For stability against the thermal budget of the CMOS BEOL process, we developed a new solid-electrolyte switch that uses a SiO₂-Ta ₂O₅ composite as the electrolyte. This switch has high thermal stability because thermal diffusion of Cu⁺ ions is suppressed in the composite. Moreover, its switching characteristics after thermal annealing are similar to those of a Ta₂O₅ switch without annealing. The switch with the SiO₂-Ta₂O₅ composite electrolyte has good ON-state durability against DC current stress; its durability is comparable to that of a single via in interconnects. The switch can be implemented in the local interconnection layers of LSIs.

Original language	English
Title of host publication	2009 IEEE International Reliability Physics Symposium, IRPS 2009
Pages	395-399
Number of pages	5
DOIs	https://doi.org/10.1109/IRPS.2009.5173285
Publication status	Published - 2009 Nov 12
Externally published	Yes
Event	2009 IEEE International Reliability Physics Symposium, IRPS 2009 - Montreal, QC, Canada Duration: 2009 Apr 26 → 2009 Apr 30

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Other

Other	2009 IEEE International Reliability Physics Symposium, IRPS 2009
Country/Territory	Canada
City	Montreal, QC
Period	09/4/26 → 09/4/30

Keywords

BEOL process
Nonvolatile switch
Thermal stability

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1109/IRPS.2009.5173285

Cite this

Banno, N., Sakamoto, T., Hada, H., Kasai, N., Iguchi, N., Imai, H., Fujieda, S., Ichihashi, T., Hasegawa, T., & Aono, M. (2009). Cu-ion diffusivity in SiO₂-Ta₂O₅ solid electrolyte and its impact on the yield of resistance switching after BEOL processes. In 2009 IEEE International Reliability Physics Symposium, IRPS 2009 (pp. 395-399). Article 5173285 (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2009.5173285

Cu-ion diffusivity in SiO₂-Ta₂O₅ solid electrolyte and its impact on the yield of resistance switching after BEOL processes. / Banno, N.; Sakamoto, T.; Hada, H. et al.
2009 IEEE International Reliability Physics Symposium, IRPS 2009. 2009. p. 395-399 5173285 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Banno, N, Sakamoto, T, Hada, H, Kasai, N, Iguchi, N, Imai, H, Fujieda, S, Ichihashi, T, Hasegawa, T & Aono, M 2009, Cu-ion diffusivity in SiO₂-Ta₂O₅ solid electrolyte and its impact on the yield of resistance switching after BEOL processes. in 2009 IEEE International Reliability Physics Symposium, IRPS 2009., 5173285, IEEE International Reliability Physics Symposium Proceedings, pp. 395-399, 2009 IEEE International Reliability Physics Symposium, IRPS 2009, Montreal, QC, Canada, 09/4/26. https://doi.org/10.1109/IRPS.2009.5173285

Banno N, Sakamoto T, Hada H, Kasai N, Iguchi N, Imai H et al. Cu-ion diffusivity in SiO₂-Ta₂O₅ solid electrolyte and its impact on the yield of resistance switching after BEOL processes. In 2009 IEEE International Reliability Physics Symposium, IRPS 2009. 2009. p. 395-399. 5173285. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/IRPS.2009.5173285

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abstract = "For stability against the thermal budget of the CMOS BEOL process, we developed a new solid-electrolyte switch that uses a SiO2-Ta 2O5 composite as the electrolyte. This switch has high thermal stability because thermal diffusion of Cu+ ions is suppressed in the composite. Moreover, its switching characteristics after thermal annealing are similar to those of a Ta2O5 switch without annealing. The switch with the SiO2-Ta2O5 composite electrolyte has good ON-state durability against DC current stress; its durability is comparable to that of a single via in interconnects. The switch can be implemented in the local interconnection layers of LSIs.",

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