Current fluctuation in sub-nano second regime in gate-all-around nanowire channels studied with ensemble Monte Carlo/molecular dynamics simulation

T. Kamioka; H. Imai; Y. Kamakura; K. Ohmori; K. Shiraishi; M. Niwa; K. Yamada; T. Watanabe

doi:10.1109/IEDM.2012.6479058

Current fluctuation in sub-nano second regime in gate-all-around nanowire channels studied with ensemble Monte Carlo/molecular dynamics simulation

T. Kamioka^*, H. Imai, Y. Kamakura, K. Ohmori, K. Shiraishi, M. Niwa, K. Yamada, T. Watanabe

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The impact of current fluctuation due to discreteness in carrier numbers on high-frequency noise amplitudes is numerically investigated, focusing on the comparison to the impact of a single trapped charge in the oxide layer for gate-all-around nanowire structures. The variation in the amount of the charge transporting through the channel within a single clock cycle is estimated. The transported charge variation due to the current fluctuation clearly shows the universality with respect to the total amount of the transported charge. It concludes that the current fluctuation becomes a dominant noise source over 100 GHz range.

Original language	English
Title of host publication	2012 IEEE International Electron Devices Meeting, IEDM 2012
Pages	17.2.1-17.2.4
DOIs	https://doi.org/10.1109/IEDM.2012.6479058
Publication status	Published - 2012 Dec 1
Externally published	Yes
Event	2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States Duration: 2012 Dec 10 → 2012 Dec 13

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2012 IEEE International Electron Devices Meeting, IEDM 2012
Country/Territory	United States
City	San Francisco, CA
Period	12/12/10 → 12/12/13

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2012.6479058

Cite this

Kamioka, T., Imai, H., Kamakura, Y., Ohmori, K., Shiraishi, K., Niwa, M., Yamada, K., & Watanabe, T. (2012). Current fluctuation in sub-nano second regime in gate-all-around nanowire channels studied with ensemble Monte Carlo/molecular dynamics simulation. In 2012 IEEE International Electron Devices Meeting, IEDM 2012 (pp. 17.2.1-17.2.4). Article 6479058 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2012.6479058

Current fluctuation in sub-nano second regime in gate-all-around nanowire channels studied with ensemble Monte Carlo/molecular dynamics simulation. / Kamioka, T.; Imai, H.; Kamakura, Y. et al.
2012 IEEE International Electron Devices Meeting, IEDM 2012. 2012. p. 17.2.1-17.2.4 6479058 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kamioka, T, Imai, H, Kamakura, Y, Ohmori, K, Shiraishi, K, Niwa, M, Yamada, K & Watanabe, T 2012, Current fluctuation in sub-nano second regime in gate-all-around nanowire channels studied with ensemble Monte Carlo/molecular dynamics simulation. in 2012 IEEE International Electron Devices Meeting, IEDM 2012., 6479058, Technical Digest - International Electron Devices Meeting, IEDM, pp. 17.2.1-17.2.4, 2012 IEEE International Electron Devices Meeting, IEDM 2012, San Francisco, CA, United States, 12/12/10. https://doi.org/10.1109/IEDM.2012.6479058

Kamioka T, Imai H, Kamakura Y, Ohmori K, Shiraishi K, Niwa M et al. Current fluctuation in sub-nano second regime in gate-all-around nanowire channels studied with ensemble Monte Carlo/molecular dynamics simulation. In 2012 IEEE International Electron Devices Meeting, IEDM 2012. 2012. p. 17.2.1-17.2.4. 6479058. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2012.6479058

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abstract = "The impact of current fluctuation due to discreteness in carrier numbers on high-frequency noise amplitudes is numerically investigated, focusing on the comparison to the impact of a single trapped charge in the oxide layer for gate-all-around nanowire structures. The variation in the amount of the charge transporting through the channel within a single clock cycle is estimated. The transported charge variation due to the current fluctuation clearly shows the universality with respect to the total amount of the transported charge. It concludes that the current fluctuation becomes a dominant noise source over 100 GHz range.",

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AU - Ohmori, K.

AU - Shiraishi, K.

AU - Niwa, M.

AU - Yamada, K.

AU - Watanabe, T.

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N2 - The impact of current fluctuation due to discreteness in carrier numbers on high-frequency noise amplitudes is numerically investigated, focusing on the comparison to the impact of a single trapped charge in the oxide layer for gate-all-around nanowire structures. The variation in the amount of the charge transporting through the channel within a single clock cycle is estimated. The transported charge variation due to the current fluctuation clearly shows the universality with respect to the total amount of the transported charge. It concludes that the current fluctuation becomes a dominant noise source over 100 GHz range.

AB - The impact of current fluctuation due to discreteness in carrier numbers on high-frequency noise amplitudes is numerically investigated, focusing on the comparison to the impact of a single trapped charge in the oxide layer for gate-all-around nanowire structures. The variation in the amount of the charge transporting through the channel within a single clock cycle is estimated. The transported charge variation due to the current fluctuation clearly shows the universality with respect to the total amount of the transported charge. It concludes that the current fluctuation becomes a dominant noise source over 100 GHz range.

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Current fluctuation in sub-nano second regime in gate-all-around nanowire channels studied with ensemble Monte Carlo/molecular dynamics simulation

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