DC and RF characteristics in Al2O3/Si 3N4 insulated-gate AlGaN/GaN heterostructure field-effect transistors

Narihiko Maeda; Takashi Makimura; Takashi Maruyama; Chengxin Wang; Masanobu Hiroki; Haruki Yokoyama; Toshiki Makimoto; Takashi Kobayashi; Takatomo Enoki

doi:10.1143/JJAP.44.L646

DC and RF characteristics in Al₂O₃/Si ₃N₄ insulated-gate AlGaN/GaN heterostructure field-effect transistors

Narihiko Maeda^*, Takashi Makimura, Takashi Maruyama, Chengxin Wang, Masanobu Hiroki, Haruki Yokoyama, Toshiki Makimoto, Takashi Kobayashi, Takatomo Enoki

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Al₂O₃/Si3́N₄ insulated-gate AlGaN/GaN heterostructure field-effect transistors (HFETs) have been fabricated, where excellent RF characteristics have been obtained in addition to the low gate leakage current as the result of employing the metal-insulator-semiconductor (MIS) structure. In an HFET with a gate length (L_g) of 0.1 μm, the cutoff frequency (f_T) and maximum oscillation frequency (f_max) were estimated to be 70 and 90 GHz, respectively. The drain current density (I_d) and transconductance (g_m) were 1.30 A/mm and 293mS/mm, respectively. The gate leakage current (I_g) was as low as 4 × 10^-5 A/mm even at a forward bias voltage of +3 V.

Original language	English
Pages (from-to)	L646-L648
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	44
Issue number	20-23
DOIs	https://doi.org/10.1143/JJAP.44.L646
Publication status	Published - 2005
Externally published	Yes

Keywords

AlGaN
AlO
Cutoff frequency (f)
GaN
Gate leakage current
HFET
Insulated-gate
Maximum oscillation frequency (f)
Metal-insulator-semiconductor (MIS)
SiN

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.44.L646

Cite this

@article{e7971271621f4003994a81bee0dfaee4,

title = "DC and RF characteristics in Al2O3/Si 3N4 insulated-gate AlGaN/GaN heterostructure field-effect transistors",

abstract = "Al2O3/Si{\'3}N4 insulated-gate AlGaN/GaN heterostructure field-effect transistors (HFETs) have been fabricated, where excellent RF characteristics have been obtained in addition to the low gate leakage current as the result of employing the metal-insulator-semiconductor (MIS) structure. In an HFET with a gate length (Lg) of 0.1 μm, the cutoff frequency (fT) and maximum oscillation frequency (fmax) were estimated to be 70 and 90 GHz, respectively. The drain current density (Id) and transconductance (gm) were 1.30 A/mm and 293mS/mm, respectively. The gate leakage current (Ig) was as low as 4 × 10-5 A/mm even at a forward bias voltage of +3 V.",

keywords = "AlGaN, AlO, Cutoff frequency (f), GaN, Gate leakage current, HFET, Insulated-gate, Maximum oscillation frequency (f), Metal-insulator-semiconductor (MIS), SiN",

author = "Narihiko Maeda and Takashi Makimura and Takashi Maruyama and Chengxin Wang and Masanobu Hiroki and Haruki Yokoyama and Toshiki Makimoto and Takashi Kobayashi and Takatomo Enoki",

year = "2005",

doi = "10.1143/JJAP.44.L646",

language = "English",

volume = "44",

pages = "L646--L648",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "20-23",

}

TY - JOUR

T1 - DC and RF characteristics in Al2O3/Si 3N4 insulated-gate AlGaN/GaN heterostructure field-effect transistors

AU - Maeda, Narihiko

AU - Makimura, Takashi

AU - Maruyama, Takashi

AU - Wang, Chengxin

AU - Hiroki, Masanobu

AU - Yokoyama, Haruki

AU - Makimoto, Toshiki

AU - Kobayashi, Takashi

AU - Enoki, Takatomo

PY - 2005

Y1 - 2005

N2 - Al2O3/Si3́N4 insulated-gate AlGaN/GaN heterostructure field-effect transistors (HFETs) have been fabricated, where excellent RF characteristics have been obtained in addition to the low gate leakage current as the result of employing the metal-insulator-semiconductor (MIS) structure. In an HFET with a gate length (Lg) of 0.1 μm, the cutoff frequency (fT) and maximum oscillation frequency (fmax) were estimated to be 70 and 90 GHz, respectively. The drain current density (Id) and transconductance (gm) were 1.30 A/mm and 293mS/mm, respectively. The gate leakage current (Ig) was as low as 4 × 10-5 A/mm even at a forward bias voltage of +3 V.

AB - Al2O3/Si3́N4 insulated-gate AlGaN/GaN heterostructure field-effect transistors (HFETs) have been fabricated, where excellent RF characteristics have been obtained in addition to the low gate leakage current as the result of employing the metal-insulator-semiconductor (MIS) structure. In an HFET with a gate length (Lg) of 0.1 μm, the cutoff frequency (fT) and maximum oscillation frequency (fmax) were estimated to be 70 and 90 GHz, respectively. The drain current density (Id) and transconductance (gm) were 1.30 A/mm and 293mS/mm, respectively. The gate leakage current (Ig) was as low as 4 × 10-5 A/mm even at a forward bias voltage of +3 V.

KW - AlGaN

KW - AlO

KW - Cutoff frequency (f)

KW - GaN

KW - Gate leakage current

KW - HFET

KW - Insulated-gate

KW - Maximum oscillation frequency (f)

KW - Metal-insulator-semiconductor (MIS)

KW - SiN

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JO - Japanese Journal of Applied Physics, Part 2: Letters

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