DC and RF characteristics of 0.7-μm-gate-length diamond metal-insulator-semiconductor field effect transistor

Hiroaki Ishizaka; Hitoshi Umezawa; Hirotada Taniuchi; Takuya Arima; Naoki Fujihara; Minoru Tachiki; Hiroshi Kawarada

doi:10.1016/S0925-9635(01)00649-5

DC and RF characteristics of 0.7-μm-gate-length diamond metal-insulator-semiconductor field effect transistor

Hiroaki Ishizaka^*, Hitoshi Umezawa, Hirotada Taniuchi, Takuya Arima, Naoki Fujihara, Minoru Tachiki, Hiroshi Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A 0.7-μm-gate-length metal-insulator-semiconductor field effect transistor (MISFET) was fabricated on a hydrogen-terminated diamond surface conductive layer. The maximum transconductance of 100 mS/mm was obtained by DC measurement. The cut-off frequency of 11 GHz and the maximum frequency of oscillation of 18 GHz were achieved for the fabricated MISFET biased at V_GS=0 V and V_DS= -12 V. These are the highest values for diamond MISFETs ever reported. In the MISFET, high-frequency small-signal equivalent circuit analysis is carried out at V_GS=O V and V_DS= -3, -5, -8, -10 and -12 V. The analysis indicates that the reduction of parasitic resistance between the source and gate is necessary for realizing higher output power.

Original language	English
Pages (from-to)	378-381
Number of pages	4
Journal	Diamond and Related Materials
Volume	11
Issue number	3-6
DOIs	https://doi.org/10.1016/S0925-9635(01)00649-5
Publication status	Published - 2002 Mar

Keywords

Current decrease
Cut-off frequency
Diamond
MISFET

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1016/S0925-9635(01)00649-5

Cite this

@article{8aee0b27918c48ed90e2f262a76f0a9b,

title = "DC and RF characteristics of 0.7-μm-gate-length diamond metal-insulator-semiconductor field effect transistor",

abstract = "A 0.7-μm-gate-length metal-insulator-semiconductor field effect transistor (MISFET) was fabricated on a hydrogen-terminated diamond surface conductive layer. The maximum transconductance of 100 mS/mm was obtained by DC measurement. The cut-off frequency of 11 GHz and the maximum frequency of oscillation of 18 GHz were achieved for the fabricated MISFET biased at VGS=0 V and VDS= -12 V. These are the highest values for diamond MISFETs ever reported. In the MISFET, high-frequency small-signal equivalent circuit analysis is carried out at VGS=O V and VDS= -3, -5, -8, -10 and -12 V. The analysis indicates that the reduction of parasitic resistance between the source and gate is necessary for realizing higher output power.",

keywords = "Current decrease, Cut-off frequency, Diamond, MISFET",

author = "Hiroaki Ishizaka and Hitoshi Umezawa and Hirotada Taniuchi and Takuya Arima and Naoki Fujihara and Minoru Tachiki and Hiroshi Kawarada",

note = "Funding Information: The authors thank Mr. Miyamoto for his assistance in the small-signal equivalent circuit analysis. They also thank Mr. Ochiai and Mr. Shimura of Micro Technology Laboratory at Waseda University. This work is supported by Murata Science Foundation, by a Grant-in-Aid for Center of Excellence (COE) Research from the Ministry of Education, Culture, Sports, Science and Technology by a Grant-in-Aid for General Scientific Research (10450127, 09555103 and 11750269) from the Ministry of Education, Science and Culture of Japan and by a Waseda University Grant for Special Research Project (99A-212). This work is also supported in part by Advanced Research Institute for Science and Engineering, Waseda University.",

year = "2002",

month = mar,

doi = "10.1016/S0925-9635(01)00649-5",

language = "English",

volume = "11",

pages = "378--381",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier BV",

number = "3-6",

}

TY - JOUR

T1 - DC and RF characteristics of 0.7-μm-gate-length diamond metal-insulator-semiconductor field effect transistor

AU - Ishizaka, Hiroaki

AU - Umezawa, Hitoshi

AU - Taniuchi, Hirotada

AU - Arima, Takuya

AU - Fujihara, Naoki

AU - Tachiki, Minoru

AU - Kawarada, Hiroshi

N1 - Funding Information: The authors thank Mr. Miyamoto for his assistance in the small-signal equivalent circuit analysis. They also thank Mr. Ochiai and Mr. Shimura of Micro Technology Laboratory at Waseda University. This work is supported by Murata Science Foundation, by a Grant-in-Aid for Center of Excellence (COE) Research from the Ministry of Education, Culture, Sports, Science and Technology by a Grant-in-Aid for General Scientific Research (10450127, 09555103 and 11750269) from the Ministry of Education, Science and Culture of Japan and by a Waseda University Grant for Special Research Project (99A-212). This work is also supported in part by Advanced Research Institute for Science and Engineering, Waseda University.

PY - 2002/3

Y1 - 2002/3

N2 - A 0.7-μm-gate-length metal-insulator-semiconductor field effect transistor (MISFET) was fabricated on a hydrogen-terminated diamond surface conductive layer. The maximum transconductance of 100 mS/mm was obtained by DC measurement. The cut-off frequency of 11 GHz and the maximum frequency of oscillation of 18 GHz were achieved for the fabricated MISFET biased at VGS=0 V and VDS= -12 V. These are the highest values for diamond MISFETs ever reported. In the MISFET, high-frequency small-signal equivalent circuit analysis is carried out at VGS=O V and VDS= -3, -5, -8, -10 and -12 V. The analysis indicates that the reduction of parasitic resistance between the source and gate is necessary for realizing higher output power.

AB - A 0.7-μm-gate-length metal-insulator-semiconductor field effect transistor (MISFET) was fabricated on a hydrogen-terminated diamond surface conductive layer. The maximum transconductance of 100 mS/mm was obtained by DC measurement. The cut-off frequency of 11 GHz and the maximum frequency of oscillation of 18 GHz were achieved for the fabricated MISFET biased at VGS=0 V and VDS= -12 V. These are the highest values for diamond MISFETs ever reported. In the MISFET, high-frequency small-signal equivalent circuit analysis is carried out at VGS=O V and VDS= -3, -5, -8, -10 and -12 V. The analysis indicates that the reduction of parasitic resistance between the source and gate is necessary for realizing higher output power.

KW - Current decrease

KW - Cut-off frequency

KW - Diamond

KW - MISFET

UR - http://www.scopus.com/inward/record.url?scp=0036508311&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036508311&partnerID=8YFLogxK

U2 - 10.1016/S0925-9635(01)00649-5

DO - 10.1016/S0925-9635(01)00649-5

M3 - Article

AN - SCOPUS:0036508311

SN - 0925-9635

VL - 11

SP - 378

EP - 381

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 3-6

ER -

DC and RF characteristics of 0.7-μm-gate-length diamond metal-insulator-semiconductor field effect transistor

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this