TY - GEN
T1 - DC and RF characterization of RF MOSFET embedding structure
AU - Takeshige, Atsushi
AU - Katayama, Kosuke
AU - Amakawa, Shuhei
AU - Takano, Kyoya
AU - Yoshida, Takeshi
AU - Fujishima, Minoru
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/6/20
Y1 - 2017/6/20
N2 - It is not so easy to correlate DC Kelvin measurement data of an RF transistor and its non-Kelvin RF measurement data, because the actual bias voltages in the latter are not known precisely. Knowing the bias voltages requires accurate characterization of its embedding structure. This paper reports on an attempt at correlating DC and RF measurements of parasitic resistances associated with a MOSFET test structure, including a transmission line, on a CMOS chip.
AB - It is not so easy to correlate DC Kelvin measurement data of an RF transistor and its non-Kelvin RF measurement data, because the actual bias voltages in the latter are not known precisely. Knowing the bias voltages requires accurate characterization of its embedding structure. This paper reports on an attempt at correlating DC and RF measurements of parasitic resistances associated with a MOSFET test structure, including a transmission line, on a CMOS chip.
UR - http://www.scopus.com/inward/record.url?scp=85023189297&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85023189297&partnerID=8YFLogxK
U2 - 10.1109/ICMTS.2017.7954273
DO - 10.1109/ICMTS.2017.7954273
M3 - Conference contribution
AN - SCOPUS:85023189297
T3 - IEEE International Conference on Microelectronic Test Structures
BT - 2017 International Conference of Microelectronic Test Structures, ICMTS 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2017 International Conference of Microelectronic Test Structures, ICMTS 2017
Y2 - 27 March 2017 through 30 March 2017
ER -